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0.29a Datasheet PDF File

For 0.29a Found Datasheets File :: 426 Search Time::2.969ms
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				IRF[International Rectifier]
Part No.	IRGPH40FD2
OCR Text	...ew. Max. 1200 29 17 58 58 8.0 130 20 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm) Units V A V W ...29A See Fig. 2, 5 -- 3.0 -- IC = 17A, T J = 150C Gate Threshold Voltage 3.0 -- 5.5 VCE = VGE, IC = 2...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V @Vge=15V Ic=17A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A)
File Size	380.38K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRH8250 IRH7250
OCR Text	0.11, MEGA RAD HARD HEXFET International Rectifier's RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and bre...29a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 29c. Maximum Avalanche Energy Vs. D...
Description	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
File Size	313.63K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHM8250 IRHM7250 JANSR2N7269 IRHM3250 IRHM4250 JANSF2N7269 JANSG2N7269
OCR Text	...IRHM8250 600K Rads (Si) RDS(on) 0.10 0.10 0.10 ID 26A 26A 26A 26A IRHM7250 JANSR2N7269 200V, N-CHANNEL REF: MIL-PRF-19500/603 (R) TM RAD...29a. Basic Gate Charge Waveform Fig 29b. Gate Charge Test Circuit www.irf.com 11 IRHM725...
Description	200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
File Size	266.93K / 12 Page	View it Online	Download Datasheet

				International Rectifier, Corp. Power MOSFET IRF[International Rectifier]
Part No.	IRFP044N
OCR Text	...ed D VDSS = 55V RDS(on) = 0.020 G ID = 53A S Description Fifth Generation HEXFETs from International Rectifier utilize adva...29A 4.0 V VDS = VGS , ID = 250A --- S VDS = 25V, I D = 28A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, ...
Description	Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=53A) 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 0.020ohm，身份证\u003d 53A条） 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
File Size	101.37K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BSS223PW
OCR Text	...y VDS RDS(on) ID 3 -20 1.2 -0.39 SOT-323 V A 2 1 VSO05561 Drain pin 3 Type BSS 223PW Package SOT-323 Ordering Code ...29A Drain-source on-state resistance VGS =-4.5, ID =-0.39A Page 2 2002-07-04 Preliminar...
Description	OptiMOS -P Small-Signal-Transistor 的OptiMOS磷小信号晶体
File Size	72.89K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHM8360 IRHM7360
OCR Text	0.22, MEGA RAD HARD HEXFET International Rectifier's RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and bre...29a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 29c. Maximum Avalanche Energy Vs. D...
Description	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET? TRANSISTOR
File Size	318.57K / 12 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDP16AN08A0 FDB16AN08A0
OCR Text	...rature 58 44 9 Figure 4 117 135 0.9 -55 to 175 A A mJ W W/oC o Ratings 75 20 Units V V A C Thermal Characteristics RJC RJA RJA...29A, VGS = 6V ID = 58A, VGS = 10V, TJ = 175oC 2 0.013 0.019 0.032 4 0.016 0.029 0.037 V Dynamic ...
Description	N-Channel PowerTrench MOSFET 75V, 58A, 16m?/a> N-Channel PowerTrench MOSFET 75V, 58A, 16mз N-Channel PowerTrench MOSFET 75V/ 58A/ 16m N-Channel PowerTrench ?MOSFET 75V, 58A, 16mOhm
File Size	203.97K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFR3412 IRFU3412
OCR Text	...T VDSS 100V RDS(on) max 0.025 ID 48A D-Pak IRFR3412 I-Pak IRFU3412 Absolute Maximum Ratings Parameter ID @ TC = 25C I...29A, VGS = 0V TJ = 125C, IF = 29A di/dt = 100A/s D S www.irf.com 1 1/22/02 IRFR/U34...
Description	100V Single N-Channel HEXFET Power MOSFET in a D-Pak package SMPS MOSFET
File Size	137.36K / 10 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	RA07N4452M RA07N4452M-01 RA07N4452M-E01
OCR Text	...INPUT VSWR in (-) 12 10 8 6 4 2 0 430 in @P out =7W T @P out =7W VDD=9.6V Pin =20mW P out @VGG =3.5V 140 120 TOTAL EFFICIENCY T(%) 1...29A - 1.5W + 0.02W) x 4.5C/W = Tcase + 5.9 C Tch2 = Tcase + (9.6V x 1.40A - 7.0W + 1.5W) x 2.4C/W = ...
Description	440-520MHz 7.5W 9.6V PORTABLE RADIO
File Size	60.69K / 9 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	CXA1616N
OCR Text	... (negative polarity sync level: 0.2 to 0.6Vp-p, picture level: 0 to 2.1Vp-p) Applications CRT display monitors Pin Configuration (Top View) ...29A current. V 29A x (T2/T1) x (200 + 270) VCC 200 6 20k 8k 6 6 EHC 3.0, 4.8V 1k ...
Description	Sync Discriminator for CRT Displays
File Size	333.48K / 20 Page	View it Online	Download Datasheet

For 0.29a Found Datasheets File :: 426 Search Time::2.969ms
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