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  -9a Datasheet PDF File

For -9a Found Datasheets File :: 5946    Search Time::1ms    
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    2SJ456

SANYO[Sanyo Semicon Device]
Part No. 2SJ456
OCR Text ...ee specified Test Circuit. IS=--9a, VGS=0 IS=--9a, di / dt=100A / s Ratings min typ 28 125 460 160 --1.0 180 --1.5 max Unit ns ns ns ns V ns Switching Time Test Circuit VIN 0V --10V VIN ID= --5.0A RL=20.0 VDD= --100V D PW=10s D.C.1%...
Description    Ultrahigh-Speed Switching Applications

File Size 29.04K  /  4 Page

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    2SJ531

HITACHI[Hitachi Semiconductor]
Part No. 2SJ531
OCR Text ...0 I D = -1mA, VDS = -10V I D = -9a, VGS = -10V Note4 I D = -9a, VGS = -4V Note4 I D = -9a, VDS = -10V Note4 VDS = -10V VGS = 0 f = 1MHz VGS = -10V, I D = -9a RL =3.33 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown volta...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 49.99K  /  9 Page

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    2SJ534

HITACHI[Hitachi Semiconductor]
Part No. 2SJ534
OCR Text ...0 I D = -1mA, VDS = -10V I D = -9a, VGS = -10V Note4 I D = -9a, VGS = -4V Note4 I D = -9a, VDS = -10V Note4 VDS = -10V VGS = 0 f = 1MHz VGS = -10V, I D = -9a RL =3.33 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown volta...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.11K  /  9 Page

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    2SJ542

HITACHI[Hitachi Semiconductor]
Part No. 2SJ542
OCR Text ...0 I D = -1mA, VDS = -10V I D = -9a, VGS = -10V Note4 I D = -9a, VGS = -4V Note4 I D = -9a, VDS = -10V Note4 VDS = -10V VGS = 0 f = 1MHz VGS = -10V, I D = -9a RL =3.33 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown volta...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.62K  /  9 Page

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    2SJ551 2SJ551L 2SJ551S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ551 2SJ551L 2SJ551S
OCR Text ...0 I D = -1mA, VDS = -10V I D = -9a, VGS = -10V Note4 I D = -9a, VGS = -4V Note4 I D = -9a, VDS = -10V Note4 VDS = -10V VGS = 0 f = 1MHz VGS = -10V, I D = -9a RL =3.33 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown volta...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 54.47K  /  9 Page

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    2SK1088 2SK1088-M

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FUJI[Fuji Electric]
Part No. 2SK1088 2SK1088-M
OCR Text ...channel MOS-FET 150V 0,3 9A 35W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless oth...
Description N-channel MOS-FET

File Size 181.89K  /  2 Page

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    2SK1186

Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
Part No. 2SK1186
OCR Text ... 1 0.5 0.3 0.05 0.1 2 ID =9A ID =4.5A 0 0.5 1 5 10 5 10 20 -50 0 50 100 150 ID (A) VGS (V) Tc (C) VDS -- Capacitance Characteristics 1000 500 Ciss VGS = 0V f = 1MHz 10 8 6 VSD -- IDR Characteristics ...
Description MOSFET 9 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 33.41K  /  1 Page

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    CD40147BMS FN3357 CD4014

INTERSIL[Intersil Corporation]
Part No. CD40147BMS FN3357 CD4014
OCR Text ...D 15 0 14 D 13 3 12 2 11 1 10 9 9A Functional Diagram Applications * Keyboard Encoding * 10 Line to BCD Encoding * Range Selection 9 0 PRIORITY SELECT BCD ENCODER D C B A 23 22 21 20 Description CD40147BMS CMOS encoder features ...
Description 10 Line to 4 Line BCD Priority Encoder(10-4线十进制编码
From old datasheet system

File Size 80.17K  /  8 Page

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    FDS2572 FDS2572NL

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS2572 FDS2572NL
OCR Text 9A, N-Channel UltraFET(R) Trench MOSFET General Description (R) UltraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for Rds(on), low ESR, low total and Miller gate charge, ...
Description 150V N-Channel UltraFET Trench MOSFET
150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET

File Size 271.78K  /  12 Page

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    HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723

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FAIRCHILD[Fairchild Semiconductor]
INTERSIL[Intersil Corporation]
Fairchild Semiconductor Corporation
Part No. HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723
OCR Text ...ire part number. Add the suffix 9A to obtain the TO-263AB in tape and reel, i.e., HGT1S20N60B3S9A. G Symbol C COLLECTOR (FLANGE) G JEDEC STYLE TO-247 E E C G COLLECTOR (FLANGE) INTERSIL CORPORATION IGBT PRODUCT IS COV...
Description 40A/ 600V/ UFS Series N-Channel IGBTs
40A, 600V, UFS Series N-Channel IGBTs
From old datasheet system
XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN
40 A, 600 V, N-CHANNEL IGBT

File Size 137.79K  /  6 Page

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