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-60v Datasheet PDF File

For -60v Found Datasheets File :: 12469 Search Time::1.532ms
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				Inchange Semiconductor Company Limited
Part No.	MJE2901T
OCR Text	... Breakdown Voltage: V(BR)CEO = -60v(Min) High DC Current Gain: hFE= 25-100@IC= -3A Complement to Type MJE2801T APPLICATIONS *Designed for use as an output device in complementary audio amplifiers up to 35 watts music power per channel. ...
Description	isc Silicon PNP Power Transistor
File Size	80.10K / 2 Page	View it Online	Download Datasheet

				LINEAR TECHNOLOGY CORP
Part No.	LTC6801IGTRPBF LTC6801IGPBF
OCR Text	...p to 12 li-ion cells in series (60v max) n stackable architecture enables > 1000v systems n 1% maximum overvoltage detection level error n adjustable overvoltage and undervoltage detection n self test features guarantee accuracy n ...
Description	1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO36
File Size	264.32K / 28 Page	View it Online	Download Datasheet

				CSB Battery Co., Ltd.
Part No.	UPS12540
OCR Text	...6 12 540W @ 5min-rate to Watt(1.60V)/pcs @25 (77 ) 11.3 A h @ 20hr-rate to 1.75V per pcs @25 (77 ) Approx. 2.75 kg(6.06 lbs) 130A(5sec) Approx. 12.5m Discharge: -15 ~50 ( 5 ~122 ) Charge: -15 ~40 ( 5 ~104 ) Storage: -15 ~40 ( 5 ~104 ) 25 3 ...
Description	specially designed for high efficient discharge application
File Size	539.75K / 2 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	BDV64 BDV64A BDV64B BDV64C
OCR Text	...,IB=-20mA IC=-5A ; VCE=-4V VCB=-60v, IE=0 VCB=-30V, IE=0;TC=150ae VCB=-80V, IE=0 VCB=-40V, IE=0;TC=150ae VCB=-100V, IE=0 VCB=-50V, IE=0;TC=150ae VCB=-120V, IE=0 VCB=-60v, IE=0;TC=150ae VCE=-30V, IB=0 CONDITIONS BDV64/64A/64B/64C SYMBO...
Description	Silicon PNP Power Transistors
File Size	118.33K / 3 Page	View it Online	Download Datasheet

				Savantic, Inc.
Part No.	BDV64 BDV64A BDV64B BDV64C
OCR Text	...,IB=-20mA IC=-5A ; VCE=-4V VCB=-60v, IE=0 VCB=-30V, IE=0;TC=150 VCB=-80V, IE=0 VCB=-40V, IE=0;TC=150 VCB=-100V, IE=0 VCB=-50V, IE=0;TC=150 VCB=-120V, IE=0 VCB=-60v, IE=0;TC=150 VCE=-30V, IB=0 VCE=-40V, IB=0 CONDITIONS SYMBOL BDV64/64A/64...
Description	Silicon PNP Power Transistors
File Size	133.53K / 3 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	BDV65A BDV65
OCR Text	...=5A ,IB=20mA IC=5A ; VCE=4V VCB=60V, IE=0 VCB=30V, IE=0;TC=150ae VCB=80V, IE=0 VCB=40V, IE=0;TC=150ae VCB=100V, IE=0 VCB=50V, IE=0;TC=150ae VCB=120V, IE=0 VCB=60V, IE=0;TC=150ae VCE=30V, IB=0 CONDITIONS BDV65/65A/65B/65C SYMBOL MIN...
Description	Silicon NPN Power Transistors
File Size	118.36K / 3 Page	View it Online	Download Datasheet

				Continental Device India Limited
Part No.	P2N2222A
OCR Text	...icbo vcb=50v, ie=0 <10 - na vcb=60v, ie=0 - <10 na ta=150 deg c vcb=50v, ie=0 <10 - ua vcb=60v, ie=0 - <10 ua icex vce=60v, vbe=3v - <10 na iceo vce=10v, ib=0 <10 <10 na emitter-cut off current iebo veb=3v, ic=0 - ...
Description	NPN SILICON PLANAR SWITCHING TRANSISTORS
File Size	158.22K / 4 Page	View it Online	Download Datasheet

				Savantic, Inc.
Part No.	BDV65A BDV65B BDV65C
OCR Text	...=5A ,IB=20mA IC=5A ; VCE=4V VCB=60V, IE=0 VCB=30V, IE=0;TC=150 VCB=80V, IE=0 VCB=40V, IE=0;TC=150 VCB=100V, IE=0 VCB=50V, IE=0;TC=150 VCB=120V, IE=0 VCB=60V, IE=0;TC=150 VCE=30V, IB=0 VCE=40V, IB=0 CONDITIONS SYMBOL BDV65/65A/65B/65C ...
Description	Silicon NPN Power Transistors
File Size	133.33K / 3 Page	View it Online	Download Datasheet

				Linear Technology
Part No.	LTC3824EMSE LTC3824EMSE-PBF LTC3824EMSE-TR LTC3824EMSE-TRPBF LTC3824IMSE-TR LTC3824IMSE-PBF LTC3824IMSE-TRPBF
OCR Text	...ith a wide input range of 4V to 60V and a high voltage gate driver, the LTC3824 is suitable for many industrial and automotive high power applications. Constant frequency current mode operation provides excellent performance. The LTC3824 ca...
Description	High Voltage Step-Down Controller With 40μA Quiescent Current High Voltage Step-Down Controller With 40楼矛A Quiescent Current
File Size	230.59K / 12 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	SGM2310
OCR Text	60V,RDS(ON) 90m[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SGM2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectivenes...
Description	N-Channel Enhancement Mode Power Mos.FET
File Size	483.99K / 4 Page	View it Online	Download Datasheet

For -60v Found Datasheets File :: 12469 Search Time::1.532ms
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