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  -.2v1 Datasheet PDF File

For -.2v1 Found Datasheets File :: 136    Search Time::1.719ms    
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    K6T8008C2M K6T8008C2M-B K6T8008C2M-F K6T8008C2M-RB55 K6T8008C2M-RB70 K6T8008C2M-RF55 K6T8008C2M-RF70 K6T8008C2M-TB55 K6T

SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K6T8008C2M K6T8008C2M-B K6T8008C2M-F K6T8008C2M-RB55 K6T8008C2M-RB70 K6T8008C2M-RF55 K6T8008C2M-RF70 K6T8008C2M-TB55 K6T8008C2M-TB70 K6T8008C2M-TF55 K6T8008C2M-TF70
OCR Text ...DR tRDR Test Condition CS1Vcc-0.2V1) Vcc=3.0V, CS1Vcc-0.2V1) Min 2.0 0 5 Typ Max 5.5 202) Unit V A ms See data retention waveform 1. CS1Vcc-0.2V,CS2Vcc-0.2V(CS1 controlled) or CS2Vcc-0.2V(CS2 controlled). 2. Industrial product=30A ...
Description 1Mx8 bit Low Power and Low Voltage CMOS Static RAM

File Size 145.34K  /  9 Page

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    K6F2008T2E

Samsung semiconductor
Part No. K6F2008T2E
OCR Text ...DR tRDR Test Condition CS1Vcc-0.2V1) Vcc=1.5V, CS1Vcc-0.2V1) Min 1.5 0 tRC Typ 0.22) Max 3.6 2 Unit V A ns See data retention waveform 1. CS1Vcc-0.2V, CS2Vcc-0.2V(CS1 controlled) or CS20.2V(CS2 controlled). 2. Typical values are measu...
Description 256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM

File Size 126.49K  /  9 Page

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    DSK6X8008TBN K6X8008T2B K6X8008T2B-F K6X8008T2B-Q DS_K6X8008TBN

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. DSK6X8008TBN K6X8008T2B K6X8008T2B-F K6X8008T2B-Q DS_K6X8008TBN
OCR Text ...mbol VDR IDR tSDR tRDR CS1Vcc-0.2V1) Vcc=1.5V, CS1Vcc-0.2V1) K6X8008T2B-F K6X8008T2B-Q See data retention waveform 0 5 Test Condition Min 1.5 Typ Max 3.6 6 10 ms Unit V A 1. CS1Vcc-0.2V,CS2Vcc-0.2V(CS1 controlled) or CS2Vcc-0.2V(CS2 cont...
Description CMOS SRAM

File Size 128.05K  /  9 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. KM681000ELT-7L KM681000ELG-5 KM681000ELG-7 KM681000ELT-5L KM681000E KM681000EL KM681000ELG-5L KM681000ELG-7L KM681000ELI KM681000ELI-L KM681000EL-L KM681000ELP-5 KM681000ELP-5L KM681000ELP-7 KM681000ELP-7L
OCR Text ...a retention Symbol VDR CS1Vcc-0.2V1) KM681000EL Data retention current IDR Vcc=3.0V, CS1Vcc-0.2V1) KM681000EL-L KM681000ELI KM681000ELI-L Data retention set-up time Recovery time tSDR tRDR See data retention waveform Test Condition Min 2.0 ...
Description 128Kx8 bit Low Power CMOS Static RAM

File Size 114.82K  /  10 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6F2008V2E K6F2008V2E-YF70 K6F2008V2E-LF55 K6F2008V2E-LF70 K6F2008V2E-YF55
OCR Text ...DR tRDR Test Condition CS1Vcc-0.2V1) Vcc=1.5V, CS1Vcc-0.2V1) Min 1.5 0 tRC Typ 0.22) Max 3.6 2 Unit V A ns See data retention waveform 1. CS1Vcc-0.2V, CS2Vcc-0.2V(CS1 controlled) or CS20.2V(CS2 controlled). 2. Typical values are measu...
Description 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8位超低功耗和低电压的CMOS静态RAM

File Size 133.16K  /  9 Page

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    K6X1008T2D-TF85 K6X1008T2D K6X1008T2D-GF70 K6X1008T2D-TQ85 K6X1008T2D-B K6X1008T2D-BB551 K6X1008T2D-BB70 K6X1008T2D-BB85

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6X1008T2D-TF85 K6X1008T2D K6X1008T2D-GF70 K6X1008T2D-TQ85 K6X1008T2D-B K6X1008T2D-BB551 K6X1008T2D-BB70 K6X1008T2D-BB85 K6X1008T2D-BF55 K6X1008T2D-BF70 K6X1008T2D-BF85 K6X1008T2D-F K6X1008T2D-GB55 K6X1008T2D-GB70 K6X1008T2D-GB85 K6X1008T2D-GF55 K6X1008T2D-GF85 K6X1008T2D-GQ70 K6X1008T2D-GQ85 K6X1008T2D-PB55 K6X1008T2D-PB70 K6X1008T2D-PB85 K6X1008T2D-PF55 K6X1008T2D-PF70 K6X1008T2D-PF85 K6X1008T2D-Q K6X1008T2D-TB55 K6X1008T2D-TB70 K6X1008T2D-TB85 K6X1008T2D-TF55 K6X1008T2D-TF70 K6X1008T2D-TQ70
OCR Text ...current Symbol VDR IDR CS1Vcc-0.2V1) K6X1008T2D-B Vcc=3.0V, CS1Vcc-0.2V1) K6X1008T2D-F K6X1008T2D-Q Data retention set-up time Recovery time tSDR tRDR See data retention waveform 0 5 Test Condition Min 2.0 Typ Max 3.6 6 6 10 Unit V A A A ms...
Description 128Kx8 bit Low Power CMOS Static RAM 128Kx8位低功耗CMOS静态RAM
SPST to 4PST Slide DIP Switches

File Size 151.79K  /  9 Page

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    KM688100

Samsung Semiconductor
Part No. KM688100
OCR Text ...DR tRDR Test Condition CS1Vcc-0.2V1) Vcc=3.0V, CS1Vcc-0.2V1) Min 2.0 0 5 Typ Max 5.5 202) Unit V A ms See data retention waveform 1. CS1Vcc-0.2V,CS2Vcc-0.2V(CS1 controlled) or CS2Vcc-0.2V(CS2 controlled). 2. Industrial product=30A ...
Description 1M x 8-Bit Low Power and Low Voltage CMOS Static RAM

File Size 166.19K  /  9 Page

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    SONY
Part No. CXB1561Q-Y
OCR Text ...ns Termination: Rt = 50, VTT = -2V1 Termination: Rt = 50, VTT = -2V VOL-Vcc Termination: Rt = 50, VTT = -2V1 Termination: Rt = 50, VTT = -2V Termination: Rt = 510, to VEE1 Termination: Rt = 510, to VEE VOLa-Vcc VIH-Vcc VIL-Vcc IIH IIL -90 T...
Description 3R-IC for Optical Fiber Communication Receiver

File Size 425.05K  /  23 Page

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    Samsung Electronic
Part No. DSK6F2008U2E K6F2008U2E-YF55 K6F2008U2E-YF70
OCR Text ...DR tRDR Test Condition CS1Vcc-0.2V1) Vcc=1.5V, CS1Vcc-0.2V1) Min 1.5 0 tRC Typ2) 0.5 Max 3.3 2 Unit V A ns See data retention waveform 1. 1) CS1Vcc-0.2V, CS2Vcc-0.2V(CS1 controlled) or 2) 0CS20.2V(CS2 controlled). 2. Typical value are...
Description 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

File Size 129.05K  /  9 Page

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    Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
Part No. 199D 199D475X0003A6V1 199D475X0003A6B1 199D475X0003A6A1 199D475X0003A1B1 199D475X0003AXA1
OCR Text ... A6 A2, YV1, 5V1 A7, YB1 B1 B2, 2V1 B6 B7, 2B1 E2 E3 E3 E4 E7 G2, 9V1 G7, 9B1 NEW 1V1 2V1 1B1 (1A1) 2B1 (2A1) DESCRIPTION 0.100 SP, UNEVEN LL, BULK 0.100 SP, EVEN LL, BULK 0.100 SP, UNEVEN LL, T&R (AMMO) 0.100 SP, EVEN LL, T&R (AMMO) 0.125 ...
Description Solid-Electrolyte Capacitors, TANTALEX Resin-Coated, Radial-Lead 固体电解质电容器,TANTALEX树脂涂层,径向引

File Size 57.62K  /  4 Page

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