typical uses for fetky devices pdf Datasheet P2 Description --- IC-ON-LINE


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typical uses for fetky devices Datasheet PDF File

For typical uses for fetky devices Found Datasheets File :: 150+ Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Siemens Semiconductor Group
Part No.	BGA318
Description	Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)
File Size	17.62K / 3 Page	View it Online	Download Datasheet

				Siemens Semiconductor Group
Part No.	BGA312
Description	Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
File Size	17.54K / 3 Page	View it Online	Download Datasheet


Part No.	PST611SM PST611WM PST611UM
Description	-20V fetky - MOSFET and Schottky Diode in a Micro 8 package; A IRF7524D1 with Standard Packaging -40V fetky - MOSFET and Schottky Diode in a SO-8 package; A IRF5803D2 with Standard Packaging -20V fetky - MOSFET and Schottky Diode in a SO-8 package; A IRF7422D2 with Standard Packaging
File Size	343.99K / 5 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-G0041 BGA310
Description	Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) From old datasheet system
File Size	19.31K / 4 Page	View it Online	Download Datasheet

				Siemens Semiconductor Group
Part No.	BGA310
Description	Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
File Size	17.56K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7534D1 IRF7534D1TR
Description	-20V fetky - MOSFET and Schottky Diode in a Micro 8 package fetky MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V) Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
File Size	104.46K / 8 Page	View it Online	Download Datasheet

				TY Semiconductor Co., Ltd
Part No.	KTS1C1S250
Description	typical RDS(on) (N-Channel)=0.9 typical RDS(on) (N-Channel)=2.1 Gate-source zener diode
File Size	1,467.96K / 3 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers List of Unclassifed Manufac...
Part No.	TL802A-1 TL801
Description	typical INSTALLATION DIAGRAM typical INSTALLATIION DIAGRAM
File Size	107.14K / 1 Page	View it Online	Download Datasheet

				Littelfuse, Inc.
Part No.	VTD175 VTD170XS VTD170 VTD175L VTD175S VTD175XL VTD200S VTD200 VTD240 VTD210 VTD210L VTD210LS VTD210S VTD210SS VTD210SD VTD175D
Description	85 ∑C to -40 ∑C 10 times % typical resistance change 85 ∑C to -40 ∑C 10 times 【5 % typical resistance change POLYFUSE RESETTABLE Fuses 85 °C to -40 °C 10 times ±5 % typical resistance change
File Size	71.26K / 2 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTHD3133PF NTHD3133PFT1G NTHD3133PFT3G
Description	-20 V, fetky, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET Power MOSFET and Schottky Diode -20 V, fetky, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET垄芒
File Size	89.62K / 7 Page	View it Online	Download Datasheet

For typical uses for fetky devices Found Datasheets File :: 150+ Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |