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PL
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| Part No. |
3CX800A7
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| OCR Text |
Triode
The 3CX800A7 is a compact power triode intended for use as a cathode-driven Class AB2 or Class B amplifier in rf applications incl...output power to 350 MHz. The 3CX800A7 is useful to 600 MHz. The anode is forcedair cooled for 800 wa... |
| Description |
High Mu Power Triode
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| File Size |
99.05K /
5 Page |
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Electronic Theatre Controls, Inc.
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| Part No. |
ITL5-1
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| OCR Text |
Triode
Typical Operation
Class C RF Oscillator for Industrial Applications Operating frequency 30 30 MHz Anode voltage Grid bias voltage G...output power Anode dissipation Grid dissipation Grid resistance Feedback ratio Oscillator efficiency... |
| Description |
Power Triode
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| File Size |
73.36K /
1 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BF999
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| OCR Text |
Triode For high-frequency stages up to 300 MHz preferably in FM applications
3
Storage temperature Channel temperature
Thermal Resist...Output capacitance VDS = 10 V, I D = 10 mA, f = 1 MHz Power gain VDS = 10 V, I D = 10 mA, f = 200 MH... |
| Description |
RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB
Silicon N-Channel MOSFET Triode
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| File Size |
133.74K /
5 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BF543
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| OCR Text |
Triode For high-frequency stages up to 300 MHz preferably in FM applications IDSS = 4mA, g fs = 12mS
3
ESD: Electrostatic discharge se...Output capacitance VDS = 10 V, I D = 4 mA, f = 1 MHz Power gain (test circuit) GG = 2mS, GL = 0,5 mS... |
| Description |
RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB
Silicon N-Channel MOSFET Triode
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| File Size |
49.07K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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