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Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
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| Part No. |
MGW30N60
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| OCR Text |
... an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability. Short circuit rated IGBT's are specifi...247AE
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Collector-Emitter Voltage Collect... |
| Description |
Insulated Gate Bipolar Transistor 50 A, 600 V, N-CHANNEL IGBT, to-247ae
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| File Size |
214.31K /
6 Page |
 View
it Online |
Download Datasheet
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ON Semi
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| Part No. |
MGW12N120E_D ON1917
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| OCR Text |
... an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability. The new generation provides lower On-v...247AE
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Collector-Emitter Voltage Collect... |
| Description |
IGBT IN TO-47 12 A @ 90 20 A @ 25 1200 VOLTS
From old datasheet system
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| File Size |
110.94K /
6 Page |
View
it Online |
Download Datasheet |
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ON Semi
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| Part No. |
MGW20N60D_D ON1924
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| OCR Text |
... an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability. Short circuit rated IGBT's are specifi...247AE
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Collector-Emitter Voltage Collect... |
| Description |
IGBT IN TO-47 20 A @ 90 32 A @ 25 600 VOLTS
From old datasheet system
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| File Size |
170.46K /
6 Page |
View
it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGW20N120_D ON1922 MGW20N120
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| OCR Text |
... an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability. Short circuit rated IGBT's are specifi...247AE
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Collector-Emitter Voltage Collect... |
| Description |
Insulated Gate Bipolar Transistor
From old datasheet system
IGBT IN TO-47 20 A @ 90 28 A @ 25 1200 VOLTS
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| File Size |
135.63K /
5 Page |
View
it Online |
Download Datasheet |
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Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
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| Part No. |
MTW45N10E MTW45N10E_D ON2699 MTW45N10
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| OCR Text |
...M Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS E-FET is des...247AE
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Drain-Source Voltage Drain-Gate V... |
| Description |
From old datasheet system
TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM
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| File Size |
155.69K /
8 Page |
View
it Online |
Download Datasheet |
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