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  tmos v power field effect tran Datasheet PDF File

For tmos v power field effect tran Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
Part No. MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D
Description tmos E-FET power field effect transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
tmos power FET 33 AMPERES 100 vOLTS RDS(on) = 0.06 OHM

File Size 240.12K  /  8 Page

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    MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D
Description tmos E-FET power field effect transistor N-Channel Enhancement-Mode Silicon Gate
tmos power FET 16 AMPERES 250 vOLTS RDS(on) = 0.25 OHM
From old datasheet system

File Size 222.23K  /  8 Page

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    MTP1N100E_D ON2558 MTP1N100E MTP1N100E-D

ON Semiconductor
Motorola, Inc
Part No. MTP1N100E_D ON2558 MTP1N100E MTP1N100E-D
Description tmos E-FET power field effect transistor N-Channel Enhancement - Mode Silicon Gate
From old datasheet system
tmos power FET 1.0 AMPERES 1000 vOLTS RDS(on) = 9.0 OHM

File Size 203.42K  /  8 Page

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    MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D

ON Semiconductor
Motorola, Inc
Part No. MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D
Description tmos E-FET power field effect transistor N-Channel Enhancement - Mode Silicon Gate
From old datasheet system
tmos power FET 2.0 AMPERES 600 vOLTS RDS(on) = 3.8 OHMS

File Size 219.23K  /  8 Page

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    MTD20N06V MTD20N06 MTD20N06V_D ON2486 MTD20N06V-D

Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
Part No. MTD20N06v MTD20N06 MTD20N06v_D ON2486 MTD20N06v-D
Description tmos power FET 20 AMPERES 60 vOLTS RDS(on) = 0.080 OHM tmos是功率场效应晶体00安培RDS(on)\u003d 0.080欧姆
From old datasheet system
tmos v power field effect transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate

File Size 256.98K  /  10 Page

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    MTV10N100E_D ON2669 MTV10N100E-D

ON Semiconductor
Part No. MTv10N100E_D ON2669 MTv10N100E-D
Description tmos E-FET power field effect transistor D3PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
tmos power FET 10 AMPERES 1000 vOLTS

File Size 268.98K  /  10 Page

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    MTD1N80E MTD1N80E-D

ON Semiconductor
Motorola, Inc
Part No. MTD1N80E MTD1N80E-D
Description tmos E-FET power field effect transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos power FET 1.0 AMPERES 800 vOLTS RDS(on) = 12 OHM

File Size 268.90K  /  10 Page

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    MTD3N25E MTD3N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD3N25E MTD3N25E-D
Description tmos E-FET power field effect transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos power FET 3 AMPERES 250 vOLTS RDS(on) = 1.4 OHM

File Size 253.11K  /  10 Page

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    MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G

ONSEMI[ON Semiconductor]
Part No. MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G
Description tmos power FET
tmos E-FET power field effect transistor DPAK for Surface Mount

File Size 93.40K  /  8 Page

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    MTD1N60E MTD1N60E_D ON2473 MTD1N60E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD1N60E MTD1N60E_D ON2473 MTD1N60E-D
Description tmos E-FET power field effect transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos power FET 1.0 AMPERE 600 vOLTS RDS(on) = 8.0 OHM
From old datasheet system

File Size 266.21K  /  10 Page

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For tmos v power field effect tran Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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