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  rg-141 u Datasheet PDF File

For rg-141 u Found Datasheets File :: 193    Search Time::1.781ms    
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    UPA1851 UPA1851GR-9JG PA1851 D12733EJ2V0DS00

NEC Corp.
NEC[NEC]
Part No. uPA1851 uPA1851GR-9JG PA1851 D12733EJ2V0DS00
OCR Text ... V ID = -2.0 A VGS(on) = -4.0 V RG = 10 VDD = -10 V ID = -2.5 A VGS = -4.0 V IF = 2.5 A, VGS = 0 V IF = 2.5 A, VGS = 0 V di/dt = 20 A / s -1.0 1 -1.5 3.5 83 141 163 220 240 50 110 500 160 310 8.3 2.4 4.7 0.82 40 6.5 105 210 250 MIN. TYP. M...
Description P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
From old datasheet system

File Size 63.43K  /  8 Page

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    IRF634 IRF634FP

TE Connectivity, Ltd.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. IRF634 IRF634FP
OCR Text ...onditions VDD = 125 V, ID = 4 A RG = 4.7 VGS = 10 V (see test circuit, Figure 3) VDD = 200V, ID = 8 A, VGS = 10V Min. Typ. 13 18 37 5.2 14.8...141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 ...
Description N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAYMOSFET N沟道250V - 0.38ohm - 8A条TO-220/TO-220FP⑩MOSFET的网格密
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY⑩ MOSFET
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY MOSFET
N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFET

File Size 332.26K  /  9 Page

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    STP4NC60 STP4NC60FP STB4NC60-1

STMICROELECTRONICS[STMicroelectronics]
Part No. STP4NC60 STP4NC60FP STB4NC60-1
OCR Text ... Conditions VDD = 300V, ID = 2A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 480V, ID = 4A, VGS = 10V Min. Typ. 14 14 16.5 2.5 9 23...141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 ...
Description N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh?II MOSFET
N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMeshII MOSFET
N-CHANNEL 600V - 1.8 OHM - 4.2A TO-220/TO-220FP/I2PAK POWERMESH II MOSFET
N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET

File Size 354.67K  /  10 Page

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    FLM8596-15F

List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. FLM8596-15F
OCR Text ...Gate Current Symbol VDS IGS IGR RG=50 RG=50 Condition Limit unit V mA mA 10 16.7 -3.62 ELECTRICAL CHARACTERISTICS (Case Temperature Tc...141. 1 -151. 8 -162. 7 -174. 2 174. 5 M ag 2. 386 2. 459 2. 524 2. 582 2. 583 2. 562 2. 544 2. 5...
Description X-Band Internally Matched FET

File Size 175.33K  /  5 Page

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    STP60NF06 STP60NF06FP

STMicroelectronics
ST Microelectronics
Part No. STP60NF06 STP60NF06FP
OCR Text ...onditions VDD = 30 V, ID = 30 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 48V, ID =60A,VGS = 10V Min. Typ. 16 108 49 18 14 66 Ma...141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 ...
Description N-CHANNEL 60V 0.014 OHM 60A TO-220 STRIPFET POWER MOSFET
N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET?/a> POWER MOSFET
N-CHANNEL 60V 0.014 OHM 60A TO-220 STRIPFET POWER MOSFET
N-CHANNEL 60V - 0.014OHM - 60A TO-220/TO-220FP STRIPFET⒙ POWER MOSFET
N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET⑩ POWER MOSFET
N-CHANNEL Power MOSFET

File Size 329.52K  /  9 Page

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    STP9NC60FP STP9NC60

STMicroelectronics
Part No. STP9NC60FP STP9NC60
OCR Text ...nditions VDD = 300V, ID = 4.5 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 480V, ID = 9.0 A, VGS = 10V Min. Typ. 20 16 55 4.5 31 ...141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 ...
Description N-CHANNEL 600V - 0.6 OHM - 9A - TO-220/TO-220FP POWERMESH II MOSFET

File Size 356.84K  /  9 Page

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    2SK3900 2SK3900-ZP

NEC
Part No. 2SK3900 2SK3900-ZP
OCR Text ...Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 0 V, L = 100 H 3. RG = 25 , Tch(peak) 150C The information in this document is subje...141 mJ 10 VDD = 30 V RG = 25 VGS = 20 0 V Starting Tch = 25C 1 0.01 0.1 1 10 VDD = 30 V RG = 25...
Description SWITCHING N-CHANNEL POWER MOSFET

File Size 142.67K  /  7 Page

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    MGP11N60E

Motorola, Inc
Part No. MGP11N60E
OCR Text ...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOuCHTONE 602-244-6609 ASIA/PACIFIC...
Description Insulated Gate Bipolar Transistor

File Size 93.72K  /  6 Page

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    MGP14N60E

Motorola, Inc
Part No. MGP14N60E
OCR Text ...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOuCHTONE 602-244-6609 ASIA/PACIFIC...
Description Insulated Gate Bipolar Transistor

File Size 95.07K  /  6 Page

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    ON Semi
Part No. MAC15M_D ON0342
OCR Text ... TM 1000 0 10 100 1000 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) 10000 1 10 20 30 40 50 60 70 80 90 100 (di/dt)c, RATE...141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488 8 Motorola Thyristor...
Description 15 AMPERES RMS600 thru 800 VOLTS
From old datasheet system

File Size 128.02K  /  8 Page

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