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ra ms Datasheet PDF File

For ra ms Found Datasheets File :: 3586 Search Time::0.844ms
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				International Rectifier
Part No.	IRF9410
OCR Text	... C 10 I S D , R e v e rse D ra in C u rre n t (A ) 10 TJ = 1 50 C TJ = 2 5C 1 1 3.0 3.5 4.0 VD S = 1 0 V 2 0 s PU L SE W I...ms -01 2AA . 5 DIM ENS IO N DO ES NO T INCLU DE M OL D P RO T RUS IO NS MO LD PR O TRU SIO NS NO T T...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
File Size	103.18K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9953
OCR Text	...M - 3.0V TOP 100 -I D , D ra in -to -S o u rce C u rre n t (A ) 10 -I D , D ra in -to -S o u rc e C u rre n t (A ) VGS - 15V ...ms -01 2AA . 5 DIM ENS IO N DO ES NO T INCLU DE M OL D P RO T RUS IO NS MO LD PR O TRU SIO NS NO T T...
Description	Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)
File Size	98.36K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9956
OCR Text	...nt (A ) IS D , R e ve rs e D ra in C u rre n t (A ) 10 10 T J = 2 5 C T J = 1 5 0 C T J = 1 50C T J = 25C 1 1 3.0 3.5 4.0...ms -01 2AA . 5 DIM ENS IO N DO ES NO T INCLU DE M OL D P RO T RUS IO NS MO LD PR O TRU SIO NS NO T T...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)
File Size	98.88K / 7 Page	View it Online	Download Datasheet

				ETC[ETC]
Part No.	QL8050 QL8150 QL8250 QL8025 QL8325
OCR Text	...A[9:0] WD[17:0] WE WCLK ASYNCRD ra[9:0] RD[17:0] RE RCLK )LJXUH ELW 5$0 0RGXOH The number of raM modules varies from 4 to 24 blocks for a total of 9.2 K to 55.3 K bits of raM. Using two "mode" pins, designers can configure each modul...
Description	LOW POWER FPGA COMBINING PERFORMANCE DENSITY AND EMBEDED raM
File Size	442.48K / 49 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ160 2SJ161 2SJ162
OCR Text	... DC = e Op 10 ms ra -2 -1.0 -0.5 s( tio (1 1 n Sh Sh = (T C ot) ot ) 25 C 50 (-120 V, -0.83 A) ) (-140 V, -0.71 A) (-160 V, -0.63 A) 2SJ160 2SJ161 2SJ162 0 50 100 Case Te...
Description	Silicon P-Channel MOS FET
File Size	39.68K / 8 Page	View it Online	Download Datasheet

				Hitachi,Ltd. Hitachi Semiconductor
Part No.	2SJ244
OCR Text	... -1.0 C O 1.5 pe ra tio n -0.3 (T a= 25 C ) 1.0 -0.1 -0.03 0.5 -0.01 -0.1 -0.3 -1.0 -3 -10 -30 -100 Drain to Source Voltage V DS (V) 0 50 100 Ambient Temperature 150 Ta ( C ) 200 **on t...
Description	Silicon P-Channel MOS FET
File Size	44.24K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ317
OCR Text	... Drain Current C O (T pe c= ra 25 tio C n ) -0.03 Ta = 25C -0.01 -0.1 -0.3 -1.0 -3 -10 -30 -100 Drain to Source Voltage V DS (V) Typical Forward Transfer Characteristics Ta = -25C Pulse test -2 I D (A) -4 25C -3 75C -...
Description	Silicon P-Channel MOS FET
File Size	37.77K / 8 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SJ399
OCR Text	... Current C D 100 n tio ra pe O -0.03 -0.01 50 Operation in this area is limited by R DS(on) -0.003 Ta = 25 C 0 50 100 150 Ta (C) 200 -0.001 -0.1 -0.3 -1 -3 -10 -30 -100 Ambient Temperature Drain to Source Volt...
Description	Silicon P-Channel MOS FET
File Size	36.00K / 7 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SJ451
OCR Text	...ation Area 1 ms PW 10 = m s pe ra 150 C D O Channel Dissipation Drain Current 100 Operation in this area is limited by R DS(on) tio n 50 Ta = 25 C -1 -3 -10 -30 -100 V DS (V) Drain to Source Voltage 0 50 ...
Description	Silicon P-Channel MOS FET
File Size	39.56K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ452
OCR Text	...ea is limited by R DS(on) pe ra tio n 50 Ta = 25 C -1 -3 -10 -30 -100 V DS (V) Drain to Source Voltage 0 50 100 150 Ta (C) 200 -0.1 -0.3 Ambient Temperature -0.20 Typical Output Characteristics -10 V -6 V...
Description	Silicon P-Channel MOS FET
File Size	39.33K / 8 Page	View it Online	Download Datasheet

For ra ms Found Datasheets File :: 3586 Search Time::0.844ms
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