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  power mos v 1000v 25a 0 400 oh Datasheet PDF File

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SANKEN[Sanken electric]
Sanken Electric Co.,Ltd.
Part No. EP01C AP01C EP01
Description 10000000'>v,Fast-Reco0000'>very Rectifier Diodes(10000000'>v,快速恢复整流二极管)

File Size 18.74K  /  1 Page

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    APT10026L2FLL

Ad0000'>vanced 0000'>power Technology Ltd.
Part No. APT10026L2FLL
Description Circular Connector; No. of Contacts:61; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RohS Compliant: No
0000'>power 0000'>mos 7 10000000'>v 38A 0.260 ohm
10000000'>v, 38A 0000'>power 0000'>mos 7 transistor

File Size 65.58K  /  2 Page

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    OM6N100SA OM5N100SA OM3N100SA OM3N100ST OM1N100SA OM1N100ST OM6N100SW

Omnirel
International Rectifier
ETC
List of Unclassifed Manufacturers
Part No. OM6N100SA OM5N100SA OM3N100SA OM3N100ST OM1N100SA OM1N100ST OM6N100SW
Description 10000000'>v; up to 6 Amp, N-channel 0000'>mosFET
10000000'>v Single N-Channel Hi-Rel 0000'>mosFET in a D3 package
10000000'>v Single N-Channel Hi-Rel 0000'>mosFET in a TO-254AA package
0000'>power 0000'>mosFET IN HERMETIC ISOLATED JEDEC PACKAGE

File Size 40.60K  /  4 Page

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    IRHY7G30CMSE

International Rectifier
Part No. IRHY7G30CMSE
Description 10000000'>v 100kRad Hi-Rel Single N-Channel SEE Hardened 0000'>mosFET in a TO-257AA package
RADIATION HARDENED 0000'>power 0000'>mosFET THRU-HOLE (TO-257AA) 10000000'>v, N-CHANNEL RAD Hard⑩ HEXFET TECHNOLOGY
RADIATION HARDENED 0000'>power 0000'>mosFET THRU-HOLE (TO-257AA) 10000000'>v, N-CHANNEL RAD Hard HEXFET TECHNOLOGY

File Size 108.18K  /  8 Page

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    IRFMG50

International Rectifier
Part No. IRFMG50
Description 10000000'>v Single N-Channel Hi-Rel 0000'>mosFET in a TO-254AA package
0000'>power 0000'>mosFET 10000000'>v, N-CHANNEL THRU-HOLE (TO-254AA)

File Size 136.83K  /  7 Page

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    APT1001R1BN APT1001R3BN

Ad0000'>vanced 0000'>power Technolo...
ADPOW[Ad0000'>vanced 0000'>power Technology]
Ad0000'>vanced 0000'>power Technology Ltd.
Ad0000'>vanced 0000'>power Technology, Ltd.
Part No. APT1001R1BN APT1001R3BN
Description 0000'>power 0000'>mos I0000'>v 10000000'>v 10.5A 1.10 ohm / 10000000'>v 10.0A 1.30 ohm
N-CHANNEL ENHANCEMENT MODE HIGH 0000'>vOLTAGE 0000'>power 0000'>mosFETS
LJT 56C 48#20 8#16 PIN RECP
Circular Connector; No. of Contacts:56; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RohS Compliant: No N沟道增强型高压功率0000'>mosFET

File Size 52.08K  /  4 Page

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    GBU410-G

Comchip Technology
Part No. GBU410-G
Description Bridge Rectifiers, 0000'>v-RRM=10000000'>v, 0000'>v-DC=10000000'>v, I-(A0000'>v)=4A

File Size 77.29K  /  3 Page

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    STF5NK100Z STP5NK100Z W5NK100Z F5NK100Z P5NK100Z STW5NK100Z

STMicroelectronics N.0000'>v.
STMICROELECTRONICS[STMicroelectronics]
Part No. STF5NK100Z STP5NK100Z W5NK100Z F5NK100Z P5NK100Z STW5NK100Z
Description N-channel 10000000'>v - 2.7з - 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH0000'>power 0000'>mosFET N沟道10000000'>v - 2.7з - 3.5A TO-220/TO-220FP/TO-247齐保护SuperMESH⑩功率0000'>mosFET
N-channel 10000000'>v - 2.7з - 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH⑩ 0000'>power 0000'>mosFET
N-channel 10000000'>v - 2.7 - 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH 0000'>power 0000'>mosFET
N-channel 10000000'>v - 2.7?/a> - 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH?/a> 0000'>power 0000'>mosFET

File Size 405.90K  /  16 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. STU6NA100 6003
Description N - CHANNEL 10000000'>v - 1.45ohm - 6A - Max220 FAST 0000'>power 0000'>mos TRANSISTOR
From old datasheet system
N - CHANNEL 10000000'>v - 1.45 - 6A - Max220 FAST 0000'>power 0000'>mos TRANSISTOR

File Size 49.52K  /  5 Page

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    SemeLAB
SEME-LAB[Seme LAB]
Part No. SML100W18
Description N-CHANNEL ENHANCEMENT MODE HIGH 0000'>vOLTAGE 0000'>power 0000'>mosFETS
N-Channel Enhancement Mode High 0000'>voltage 0000'>power 0000'>mosFET(0000'>vdss:10000000'>v,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率0000'>mos场效应管(0000'>vdss:10000000'>v,Id(cont):9A,Rds(on):1.100Ω))

File Size 25.75K  /  2 Page

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