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Alpha & Omega Semiconductor
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Part No. |
AOTF27S60
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OCR Text |
...le pulsed avalanche energy g w p d repetitive avalanche energy c 50 357 mj mj 110 avalanche current c 17* 17 junction and storage temperature range t c =25c dv/dt 2.9 power dissipation b 480 40 gate-source voltage va t c =100c pulsed dr... |
Description |
Single HV MOSFETs (500V - 1000V)
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File Size |
475.03K /
7 Page |
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it Online |
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Wolfspeed
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Part No. |
PXAC243502FV-V1
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OCR Text |
...hz, 28 v - ouput power = 250 w p 1db - efficiency = 46% - gain = 16 db ?? integrated esd protection ?? human body model class 2 (per ansi/e...gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1 a on-state resistance main v... |
Description |
High Power RF LDMOS FET 350W, 28V, 2300 - 2400 MHz
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File Size |
337.52K /
10 Page |
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it Online |
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Nexperia
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Part No. |
PMZ320UPE
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OCR Text |
p-channel trench mosfet 24 march 2015 product data sheet 1. general description p-channel enhancement mode field-effect transistor (fet) in ...gate-source voltage t j = 25 c -8 - 8 v i d drain current v gs = -4.5 v; t amb = 25 c [1] - - -1 ... |
Description |
30 V, P-channel Trench MOSFET
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File Size |
307.64K /
15 Page |
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it Online |
Download Datasheet
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Nexperia
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Part No. |
PMZ130UNE
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OCR Text |
... t amb = 25 c; single pulse; t p 10 s - 8 a [2] - 350 mw t amb = 25 c [1] - 760 mw p tot total power dissipation t sp = 25 c - 6250 mw ...gate-source threshold voltage i d = 250 a; v ds = v gs ; t j = 25 c 0.45 0.7 0.95 v i dss drain l... |
Description |
20 V, N-channel Trench MOSFET
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File Size |
314.36K /
14 Page |
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it Online |
Download Datasheet
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Price and Availability
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