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  p-gate Datasheet PDF File

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    VS-150MT060WDF-P

Vishay Siliconix
Part No. VS-150MT060WDF-P
OCR Text p www.vishay.com vishay semiconductors revision: 09-oct-17 1 document number: 96009 for technical questions within your region: diodes...gate to emitter voltage v ge 20 v maximum continuous collector current at v ge = 15 v, t j = 150...
Description MTP PressFit IGBT Power Module Primary Dual Forward

File Size 264.87K  /  11 Page

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    ST303C12LHK1-P ST303CLPBF

Vishay Siliconix
Part No. ST303C12LHK1-P ST303CLPBF
OCR Text ... S 303C..L S T eries T ezoid al p ulse rap T = 40C C d i/ d t = 50A/ s 3000 tp S 303C..L S T eries T pezoida l pulse ra T = 55C C d i/d t =...gate puls e a) R ecomm ended load line for rated di/dt : 2 V, 1 0 0ohm ; tr<= s 1s b) R ecomm ended...
Description Inverter Grade Thyristors (Hockey PUK Version), 515 A

File Size 336.00K  /  9 Page

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    ST303C12CHK1-P ST303CPBF

Vishay Siliconix
Part No. ST303C12CHK1-P ST303CPBF
OCR Text ... H 7 K 8 1 9 10 P 11 Thyristor Essential part number 3 = Fast turn-off C = Ceramic PUK Voltage code x 100 = VRRM (see Vo...gate and aux. cathode unsoldered leads) dV/dt - tq combinations available dV/dt (V/s) 10 tq (s) 12 u...
Description Inverter Grade Thyristors (PUK Version), 620 A

File Size 296.83K  /  9 Page

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    SFI9630TU

Fairchild Semiconductor
Part No. SFI9630TU
OCR Text ... i dm v gs e as i ar e ar dv/dt p d i d t j , t stg t l a v mj a mj v/ns w w w/ o c a o c v dss v * sfw/i9630 bv dss = -200 v r ds(on) ...gate threshold voltage gate-source leakage , forward gate-source leakage , reverse characteris...
Description 200V P-Channel A-FET

File Size 251.89K  /  7 Page

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    Alpha & Omega Semiconductor
Part No. AOTF27S60
OCR Text ...le pulsed avalanche energy g w p d repetitive avalanche energy c 50 357 mj mj 110 avalanche current c 17* 17 junction and storage temperature range t c =25c dv/dt 2.9 power dissipation b 480 40 gate-source voltage va t c =100c pulsed dr...
Description Single HV MOSFETs (500V - 1000V)

File Size 475.03K  /  7 Page

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    Wolfspeed
Part No. PXAC243502FV-V1
OCR Text ...hz, 28 v - ouput power = 250 w p 1db - efficiency = 46% - gain = 16 db ?? integrated esd protection ?? human body model class 2 (per ansi/e...gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1 a on-state resistance main v...
Description High Power RF LDMOS FET 350W, 28V, 2300 - 2400 MHz

File Size 337.52K  /  10 Page

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    Nexperia
Part No. PMZ320UPE
OCR Text p-channel trench mosfet 24 march 2015 product data sheet 1. general description p-channel enhancement mode field-effect transistor (fet) in ...gate-source voltage t j = 25 c -8 - 8 v i d drain current v gs = -4.5 v; t amb = 25 c [1] - - -1 ...
Description 30 V, P-channel Trench MOSFET

File Size 307.64K  /  15 Page

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    Nexperia
Part No. PMZ130UNE
OCR Text ... t amb = 25 c; single pulse; t p 10 s - 8 a [2] - 350 mw t amb = 25 c [1] - 760 mw p tot total power dissipation t sp = 25 c - 6250 mw ...gate-source threshold voltage i d = 250 a; v ds = v gs ; t j = 25 c 0.45 0.7 0.95 v i dss drain l...
Description 20 V, N-channel Trench MOSFET

File Size 314.36K  /  14 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL)...Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Oper...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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