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  n-channel tmos e-fet power mos Datasheet PDF File

For n-channel tmos e-fet power mos Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06EZL-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
Part No. MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06EZL-D
Description tmos e-fet High Energy power FET n-channel Enhancement-Mode Silicon Gate
From old datasheet system
tmos power FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM

File Size 221.74K  /  8 Page

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    MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Part No. MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D
Description tmos e-fet High Energy power FET n-channel Enhancement-Mode Silicon Gate
From old datasheet system
tmos power FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS

File Size 254.33K  /  8 Page

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    MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D

ON Semiconductor
Motorola, Inc.
Part No. MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D
Description tmos e-fet High Energy power FET n-channel Enhancement-Mode Silicon Gate
tmos power FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system

File Size 180.78K  /  8 Page

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    MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D
Description tmos e-fet High Energy power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate
tmos power FET 2.0 AMPERES 500 VOLTS
From old datasheet system

File Size 273.51K  /  10 Page

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    MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D
Description tmos e-fet High Energy power FET D2PAK for Surface Mount n-channel Enhancement-Mode Silicon Gate
tmos power FET 2.0 AMPERES 600 VOLTS
From old datasheet system

File Size 270.78K  /  10 Page

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    MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D

Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D
Description From old datasheet system
tmos power FET 3.0 AMPERES 1000 VOLTS
tmos e-fet High Energy power FET D2PAK for Surface Mount n-channel Enhancement-Mode Silicon Gate

File Size 261.84K  /  10 Page

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    MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D
Description tmos e-fet High Energy power FET D2PAK-SL Straight Lead n-channel Enhancement-Mode Silicon Gate
tmos power FET 4.0 AMPERES 800 VOLTS
From old datasheet system

File Size 156.99K  /  8 Page

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    MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422

MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422
Description From old datasheet system
tmos power FET 3.0 AMPERES 600 VOLTS
tmos e-fet High Energy power FET D2PAK for Surface Mount n-channel Enhancement-Mode Silicon Gate

File Size 71.75K  /  4 Page

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    MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D
Description tmos e-fet High Energy power FET D2PAK for Surface Mount n-channel Enhancement-Mode Silicon Gate
tmos power FET 3.0 AMPERES 1200 VOLTS
From old datasheet system

File Size 321.60K  /  12 Page

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    MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D
Description tmos power FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM tmos14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆
tmos power FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, n-channel, Si, power, mosFET, TO-264AA
From old datasheet system
tmos e-fet power Field Effect Transistor n-channel Enhancement Mode Silicon Gate

File Size 232.49K  /  8 Page

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For n-channel tmos e-fet power mos Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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