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INFINEON[Infineon Technologies AG]
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| Part No. |
BSP296
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| OCR Text |
...n. RthJS RthJA -
Values typ. max. 25
Unit
K/W
-
115 70
Electrical Characteristics, at Tj = 25 C, unless otherwise specifie...80V, ID =1.1A
-
0.7 5 13.8 2.7
0.9 7.5 17.2 -
nC
Gate charge total Gate plateau volta... |
| Description |
SIPMOS Small-Signal-Transistor
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| File Size |
80.08K /
8 Page |
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CYSTEKEC[Cystech Electonics Corp.]
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| Part No. |
CASD355SG
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| OCR Text |
... IR IR V(BR) CD trr Min 100 Typ Max 1.2 100 50 30 4 4 Unit V nA A A V pF ns
CASD355SG
CYStek Product Specification
CYStech Electron...80V / Max. Values
Reverse Leakage Current---I
100
Tj=25 Pulse Width 300s 1% Duty Cycle
1... |
| Description |
100V/100mA SURFACE MOUNT SWITCHING DIODE
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| File Size |
143.58K /
3 Page |
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it Online |
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Advanced Power Electronics ...
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| Part No. |
AP85T10GP-HF-14
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| OCR Text |
...meter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source...80v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate... |
| Description |
Simple Drive Requirement
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| File Size |
56.08K /
4 Page |
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it Online |
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VISAY[Vishay Siliconix]
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| Part No. |
CTS32 749DX CTS1 CTS13
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| OCR Text |
...SIONS in millimeters
30 MIN. L MAX. 30 MIN.* D MAX.
od *23mm MAX. FOR TAPED CAPACITORS
CASE CODE A B C D www.vishay.com 44
BS D MA...80V 50V A A A A A A A A A A A B B B B B B B B B C C C C C D D 100V 67V A A A A A A A A A A B B B B B... |
| Description |
Hermetically Sealed, Axial-Lead, To CECC Specifications
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| File Size |
111.65K /
10 Page |
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it Online |
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Advanced Power Electronics ...
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| Part No. |
AP95T11GI-HF-14
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| OCR Text |
...meter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 110 - - v r ds(on) static drain-source...80v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate... |
| Description |
Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
92.43K /
4 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FM400TU-3A
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| OCR Text |
... -- -- -- 7.0 -- -- -- 0.1 0.09 Max. 1 7.3 1.5 3.55 -- 0.71 -- -- -- 75 10 6 -- 400 300 450 200 200 -- 1.3 0.19 0.142 -- -- Unit mA V A m V ...80V, ID = 200A, VGS1 = VGS2 = 15V RG = 6.3, Inductive load switching operation IS = 200A
ns
IS... |
| Description |
HIGH POWER SWITCHING USE INSULATED PACKAGE
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| File Size |
105.21K /
5 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FM600TU-3A FM600TU-07A
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| OCR Text |
... -- -- -- 8.0 -- -- -- 0.1 0.09 Max. 1 7.3 1.5 2.2 -- 0.66 -- -- -- 110 15 10 -- 400 400 500 400 200 -- 1.3 0.13 0.096 -- -- Unit mA V A m V...80V, ID = 300A, VGS1 = VGS2 = 15V RG = 4.2, Inductive load switching operation IS = 300A
ns
IS... |
| Description |
HIGH POWER SWITCHING USE INSULATED PACKAGE
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| File Size |
105.03K /
5 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
FRF150R FRF150D FRF150H
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| OCR Text |
....063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
CAUTION: These devices are sensitive to...80V, VGS = 0 VDS = 80V, VGS = 0, TC = +125oC Time = 20s VGS = 10V, ID = 25A VGS = 10V, ID = 20A VDD ... |
| Description |
25A/ 100V/ 0.07 Ohm/ Rad Hard/ N-Channel Power MOSFETs
25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs
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| File Size |
48.42K /
6 Page |
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it Online |
Download Datasheet |
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