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ST Microelectronics
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| Part No. |
ST13003-K
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| OCR Text |
k high voltage fast-switching npn power transistor datasheet - production data figure 1. internal schematic diagram features ? high voltag...br)ebo v i c collector current 1.5 a i cm collector peak current (t p < 5 ms) 3 a i b base current ... |
| Description |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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| File Size |
249.59K /
10 Page |
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it Online |
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Infineon
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| Part No. |
SPD13N05L
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| OCR Text |
...characteristics r thjc - - 4.3 k/w thermal resistance, junction - case - thermal resistance, junction - ambient, leded r thja - 100 - -...br)dss 55 - v gate threshold voltage, v gs = v ds i d = 20 a v gs(th) 2 1.6 1.2 zero gate volt... |
| Description |
N-Channel SIPMOS Power Transistor
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| File Size |
136.69K /
8 Page |
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it Online |
Download Datasheet |
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Infineon
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| Part No. |
SPD02N80C3
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| OCR Text |
..., junction - case r thjc - - 3 k/w smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 2) r thja - - - - 75 50 so...br)dss v gs =0v, i d =0.25ma 800 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v,... |
| Description |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
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| File Size |
322.58K /
11 Page |
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it Online |
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WILLAS ELECTRONIC CORP
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| Part No. |
MMBT2907ALT1 MMBT2907LT1
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| OCR Text |
...ircuit 0 0 ?16 v 200 ns 50 1.0 k 200 ?30 v to oscilloscope rise time < 5.0 ns +15 v ?6.0 v 1.0 k 37 50 1n916 1.0 k 200 ns ?30 v to oscilloscope rise time < 5.0 ns input z o = 50 ? prf = 150 pps rise time < 2.0 ns p.w. < 200 ns inp... |
| Description |
General Purpose Transistor PNP Silicon
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| File Size |
525.53K /
5 Page |
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it Online |
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