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  hyper-b Datasheet PDF File

For hyper-b Found Datasheets File :: 841    Search Time::3.344ms    
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    K4E151611 K4E151611D K4E151612D K4E171611D K4E171612D K4E151611D-J K4E151611D-T K4E151612D-T K4E151612D-J

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E151611 K4E151611D K4E151612D K4E171611D K4E171612D K4E151611D-J K4E151611D-T K4E151612D-T K4E151612D-J
OCR Text ... within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45...B-R self refresh) RAS precharge time (C-B-R self refresh) CAS hold time (C-B-R self refresh) * KM416...
Description 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Extended Data Out

File Size 550.56K  /  35 Page

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    K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TCL

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TCL
OCR Text ... Access time from CAS precharge Hyper Page cycle time Hyper Page read-modify-write cycle time CAS precharge time (Hyper page cycle) RAS puls...B-R refresh) W to RAS hold time (C-B-R refresh) Output data hold time Output buffer turn off delay f...
Description 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out

File Size 414.70K  /  21 Page

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    K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL-6 K4E640812B-TC-45 K4E660812B-JC-6 K4E660812B-JC-45 K4E660812B-JC-5
OCR Text ... Access time from CAS precharge Hyper Page cycle time Hyper Page read-modify-write cycle time CAS precharge time (Hyper page cycle) RAS puls...B-R refresh) W to RAS hold time (C-B-R refresh) Output data hold time Output buffer turn off delay f...
Description 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns

File Size 415.47K  /  21 Page

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    K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5 K4E640812C-JC-45 K4E660812C-JCL-5
OCR Text ... Access time from CAS precharge Hyper Page cycle time Hyper Page read-modify-write cycle time CAS precharge time (Hyper page cycle) RAS puls...B-R refresh) W to RAS hold time (C-B-R refresh) Output data hold time Output buffer turn off delay f...
Description 8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns

File Size 415.01K  /  21 Page

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    MRFIC1502

MOTOROLA[Motorola, Inc]
Part No. MRFIC1502
OCR Text ...ists of a coupling capacitor, a hyper-abrupt varactor diode, and a wire wound chip inductor. With the values shown on the application MRF...B DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 (0.010) PER SIDE. DIMENSIONS A AND B...
Description 1.575 GHz GPS DOWNCONVERTER

File Size 161.61K  /  7 Page

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    Q67007-A5211 TUA6010XS TUA6010 TUA6010XSGEG

INFINEON[Infineon Technologies AG]
Part No. Q67007-A5211 TUA6010XS TUA6010 TUA6010XSGEG
OCR Text ...alanced oscillator for the VHF, HYPER and UHF frequency range Optimum decoupling of input frequency from oscillator The IC is suitable for a...B/OV-B VOU-C/OV-C VIFout VIFoutx -0.3 -5 -0.3 +6 2 6 3 VVCCA 6 V V mA V V V max Unit Remarks All ...
Description Wireless Components
TV Mixer-Oscillator-PLL

File Size 337.75K  /  32 Page

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    K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D553238F-JC36 K4D553238F-JC40 K4D553238F-JC50 K4D553238F-EC2A0 K4D553238

SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D553238F-JC36 K4D553238F-JC40 K4D553238F-JC50 K4D553238F-EC2A0 K4D553238F-JC2A0
OCR Text ...D553238F is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG...B C D E F G H J K L M N DQS0 DQ4 DQ6 DQ7 DQ17 DQ19 DQS2 DQ21 DQ22 CAS RAS CS 256M GDDR SDRAM ...
Description 256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存
8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144

File Size 295.12K  /  17 Page

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    K4J55323QF-GC K4J55323QF-GC14 K4J55323QF-GC15 K4J55323QF-GC16 K4J55323QF-GC20

Samsung semiconductor
Part No. K4J55323QF-GC K4J55323QF-GC14 K4J55323QF-GC15 K4J55323QF-GC16 K4J55323QF-GC20
OCR Text ...32 GDDR3 is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG...B WDQS0 RDQS0 C D E F G DQ4 DQ6 DQ7 DQ17 DQ19 DM0 DQ5 RFU3 DQ16 DQ18 RDQS3 WDQS3 DM3 DQ26 RFU4 D...
Description 256Mbit GDDR3 SDRAM

File Size 1,021.57K  /  49 Page

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    K4N26323AE K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25

SAMSUNG[Samsung semiconductor]
Part No. K4N26323AE K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25
OCR Text ...32 GDDR2 is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,976 words by 32 bits, fabricated with SAMSUNG...B C D E F G H J K L M N DQS0 DQ4 DQ6 DQ7 DQ17 DQ19 DQS2 DQ20 DQ21 DQ23 VREF A0 128M GDDR2 SDRAM ...
Description 128Mbit GDDR2 SDRAM

File Size 822.96K  /  52 Page

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    K4D623238B-GC K4D623238B-GC_L33 K4D623238B-GC_L40 K4D623238B-GC_L45 K4D623238B-GC_L50 K4D623238B-GC_L55 K4D623238B-GC_L6

Samsung Semiconductor Co., Ltd.
Samsung Electronic
Part No. K4D623238B-GC K4D623238B-GC_L33 K4D623238B-GC_L40 K4D623238B-GC_L45 K4D623238B-GC_L50 K4D623238B-GC_L55 K4D623238B-GC_L60 K4D623238B-GC/L33 K4D623238B-GC/L40 K4D623238B-GC/L45 K4D623238B-GC/L50 K4D623238B-GC/L55 K4D623238B-GC/L60
OCR Text ...K4D623238 is 67,108,864 bits of hyper synchronous data rate Dynamic RAM organized as 2 x1,048,976 words by 32 bits, fabricated with SAMSUNG ...B C D E F G H J K L M N DQS0 DQ4 DQ6 DQ7 DQ17 DQ19 DQS2 DQ21 DQ22 CAS RAS CS 64M DDR SDRAM 3 ...
Description 64Mbit DDR SDRAM 64Mb的DDR SDRAM内存

File Size 146.02K  /  17 Page

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