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HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
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| Part No. |
BB302C
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| OCR Text |
... 3 1 4
1. Source 2. Gate1 3. Gate2 4. Drain
* Note 1 Marking is "BW-". * Note 2 BB302C is individual type number of HITACHI BBFET.
...Input capacitance Output capacitance c iss c oss 2.2 0.8 -- 22 3.0 1.1 0.017 26 4.0 1.5 0.04 -- pF p... |
| Description |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
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| File Size |
57.12K /
11 Page |
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it Online |
Download Datasheet
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INFINEON[Infineon Technologies AG]
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| Part No. |
BF5030W
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| OCR Text |
...1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 6 V, V...input capacitance VDS = 3 V, V G2S = 3 V, f = 10 MHz Output capacitance VDS = 3 V, V G2S = 3 V, f = ... |
| Description |
Silicon N-Channel MOSFET Tetrode
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| File Size |
164.69K /
10 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BG5130R
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| OCR Text |
...1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 6 V, V...input capacitance VDS = 3 V, V G2S = 3 V, f = 10 MHz Output capacitance VDS = 3 V, V G2S = 3 V, f = ... |
| Description |
DUAL - N-Channel MOSFET Tetrode
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| File Size |
199.48K /
10 Page |
View
it Online |
Download Datasheet |
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