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STMICROELECTRONICS[STMicroelectronics]
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Part No. |
STTH20004TV1
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OCR Text |
...rrent dIF/dt = 100 A/s Softness factor Tj = 125 C IF = 100 A VR = 200 V dIF/dt = 100 A/s IF = 100 A dIF/dt = 200 A/s VFR = 1.1 x VFmax IF = 100 A dIF/dt = 200 A/s VFR = 1.1 x VFmax
Forward recovery Tj = 25 C time Forward recovery Tj = 25... |
Description |
Ultrafast high voltage rectifier
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File Size |
136.97K /
6 Page |
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STMICROELECTRONICS[STMicroelectronics]
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Part No. |
STTH20003TV
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OCR Text |
...verse recovery current Softness factor Forward recovery time Forward recovery voltage Test conditions IF = 0.5 A Irr = 0.25 A IR = 1 A Tj = 25 C IF = 1 A dIF/dt = -50 A/s VR = 30 V VR = 200 V IF = 100 A dIF/dt = -200 A/s IF = 100 A VR = 200... |
Description |
HIGH FREQUENCY SECONDARY RECTIFIER
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File Size |
114.81K /
7 Page |
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STMICROELECTRONICS[STMicroelectronics]
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Part No. |
STTH16003TV1 STTH16003TV
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OCR Text |
... 60 40 20 0
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values, per diode).
S factor 0.6
VR=200V Tj=125C
0.5
IF=2xIF(av)
VR=200V Tj=125C
0.4
IF=IF(av) IF=0.5xIF(av)
0.3 0.2 0.1
dIF/dt(A/s) 0 50 100 150 200... |
Description |
HIGH FREQUENCY SECONDARY RECTIFIER
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File Size |
54.65K /
5 Page |
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
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Part No. |
STTH15L06G-TR STTH15L06 STTH15L06D STTH15L06FP STTH15L06G
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OCR Text |
...re 8: Reverse recovery softness factor versus dIF/dt (typical values)
S factor
1.6 1.4 1.2 1.0
IF< 2 x IF(AV) VR=400V Tj=125C
1000 800 600 400 200 0 0 100 200 300 400 500
IF=0.5 x IF(AV)
0.8 0.6 0.4 0.2
dIF/dt(A/s)
0.0 0 50 10... |
Description |
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
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File Size |
98.34K /
8 Page |
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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Part No. |
STTH1506DPI STTH1506D
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OCR Text |
... DIODE IN CONTINUOUS MODE POWER factor CORRECTORS AND HARD SWITCHING CONDITIONS DESIGNED FOR HIGH DI/DT OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SIC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS INTERNAL CERAMIC INSULATED ... |
Description |
15 A, 600 V, SILICON, RECTIFIER DIODE Tandem 600V HYPERFAST BOOST DIODE
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File Size |
71.04K /
5 Page |
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics
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Part No. |
STTA812G-TR STTA812D STTA812DI STTA812G
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OCR Text |
...verse recovery current Softness factor Test conditions Tj = 25C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1 A dIF/dt =-50A/s VR =30V Tj = 125C VR = 600V dIF/dt = -64 A/s dIF/dt = -500 A/s Tj = 125C VR = 600V dIF/dt = -500 A/s IF =8A 12 25 IF =8A ... |
Description |
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Dark Blue; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1015, CSA Type TEW, JQA-F-, Passes VW-1 Flame Test; Conductor Material:Copper RoHS Compliant: Yes TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
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File Size |
90.06K /
10 Page |
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