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ETC[ETC]
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| Part No. |
AN-937
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| OCR Text |
...ain voltage. All HEXFET(R)s are enhancementmode devices.
AN-937 (v.Int)
SOURCE METALLIZATION
SILICON GATE CHANNEL
INSULATING OXIDE
P
N SOURCE
GATE OXIDE
N
N
TRANSISTOR TRANSISTOR DRAIN DRAIN All MOSFET voltages... |
| Description |
Gate Drive Characteristics and Requirements for HEXFET
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| File Size |
361.85K /
21 Page |
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Download Datasheet
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MOTOROLA[Motorola, Inc]
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| Part No. |
AN211A
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| OCR Text |
...Figure 6. Equivalent Circuit of enhancementmode MOSFET
DIFFUSED CHANNEL GATE DRAIN ALUMINUM
SOURCE Si3N4 SiO2
N
N+
N+
P (SUBSTRATE)
3
AN211A
SOURCE GATE (-)
Freescale Semiconductor, Inc.
DRAIN SiO2 Si3N4
and ch... |
| Description |
FIFELD EFFECT TRANSISTORS IN THEORY AND PRACTICE
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| File Size |
327.70K /
12 Page |
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it Online |
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Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
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| Part No. |
AN804
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| OCR Text |
...l application of the p-channel, enhancementmode MOSPOWER FET is in switching power (or voltage) to grounded (ground return) loads. To drive the FET properly, the gate voltage must be referenced to its source. For enhancement-mode MOSFETs, t... |
| Description |
P-Channel MOSFETs, the Best Choice for High-Side Switching
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| File Size |
39.88K /
4 Page |
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it Online |
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Price and Availability
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