6w 6w pdf Datasheet P2 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : A8827 CSFD26 TR1000 AT6003 IRFU010 6B427 M620FP3 BR2502W
	Product Description
	Full Text Search

6w 6w Datasheet PDF File

For 6w 6w Found Datasheets File :: 2735 Search Time::1.656ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products] Maxim Integrated Products, Inc.
Part No.	MAX1843 MAX1843EGI
OCR Text	.................................1.6w Operating Temperature Range ...........................-40C to +85C All Other Pins to GND.................................-0.3V to (VCC + 0.3V) LX Current (Note 1).............................................
Description	2.7A, 1MHz, Low-Voltage, Step-Down Regulator with Internal Synchronous Rectification in QFN Package 2.7A / 1MHz / Low-Voltage / Step-Down Regulator with Internal Synchronous Rectification in QFN Package
File Size	362.90K / 13 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF317
OCR Text	...TS) Pout = 100 W VCC = 28 V 100 6w 80 Pin = 10 W 8W 60 40 f = 100 MHz 28 f, FREQUENCY (MHz) VCC, SUPPLY VOLTAGE (VOLTS) Figure 6. Power Gain versus Frequency Figure 7. Power Output versus Supply Voltage 120 Pout, POWER ...
Description	BROADBAND RF POWER TRANSISTOR NPN SILICON
File Size	113.55K / 6 Page	View it Online	Download Datasheet

				Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
Part No.	ALP121AAX
OCR Text	... power consumption is 0.4W to 0.6w. * Display surface luminance is typ 200cd/m2. Specifications Item Dot count (H) x (V) Effective display dimensions (H) x (V) Display size (diagonal) Dot pitch (H) x (V) Color arrangement External Dimen...
Description	Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:12-35 RoHS Compliant: No Low-Temperature Polysilicon 1.5-inch TFT LCD Module
File Size	679.79K / 8 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010B2LC APT5010LLC
OCR Text	...t.] @ 25C VDD = 0.5 VDSS RG = 0.6w VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pu...
Description	Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	117.68K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010B2LL APT5010LLL
OCR Text	...V NF A I VDD = 0.5 VDSS RG = 0.6w ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 46 184 1.3 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	55.78K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010B2 APT5010B2FLL APT5010LFLL
OCR Text	...t.] @ 25C VDD = 0.5 VDSS RG = 0.6w ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 46 184 1.3 5 250 500 (VGS = 0V, IS = -ID [Cont.]) Tj = 25C Tj = 25C Tj = 125C 1.6 5.5 15 27 Tj = 125C Tj = 25C Tj ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	54.02K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JFLL
OCR Text	...t.] @ 25C VDD = 0.5 VDSS RG = 0.6w ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 44 176 1.3 5 250 500 (VGS = 0V, IS = -ID [Cont.]) Tj = 25C Tj = 25C Tj = 125C 1.6 5.5 15 27 Tj = 125C Tj = 25C Tj ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	53.49K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT5010JLC
OCR Text	...VGS = 15V VDD = 0.5 VDSS RG = 0.6w ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 44 176 1.3 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recove...
Description	POWER MOS VI 500V 44A 0.100 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.93K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JLL
OCR Text	...VGS = 15V VDD = 0.5 VDSS RG = 0.6w ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 44 176 1.3 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	51.35K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology Ltd.
Part No.	APT5010LLC APT5010B2LC APT5010B2LC-06
OCR Text	...DSS ID = ID[Cont.] @ 25C RG = 0.6w MIN TYP MAX UNIT 5375 1040 185 145 34 76 12 15 28 4.6 6500 1460 280 220 41 120 24 30 42 10.0 ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay T...
Description	47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI 500V 47A 0.100 Ohm
File Size	64.96K / 4 Page	View it Online	Download Datasheet

For 6w 6w Found Datasheets File :: 2735 Search Time::1.656ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |