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  64mx16bit Datasheet PDF File

For 64mx16bit Found Datasheets File :: 21    Search Time::1.641ms    
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    HY27UA081G1M HY27SA161G1M HY27SA081G1M

Hynix Semiconductor
Part No. HY27UA081G1M HY27SA161G1M HY27SA081G1M
OCR Text 64mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64mx16bit) NAND Flash Memory Revision History No. 0.0 0.1 1) Initial Draft 1) Add 1.8V Operation Product to Data sheet 1) Change AC Characteristics 0.2 - tWP(25ns->40ns), tWC(50ns->6...
Description NAND Flash - 1Gb

File Size 726.67K  /  43 Page

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    K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9F1G08Q0M-YIB0 K9F1G08U0M K9F1G08U0M-FCB0 K9F1G08U0M-FIB0 K9F1G08U0M-PC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9F1G08Q0M-YIB0 K9F1G08U0M K9F1G08U0M-FCB0 K9F1G08U0M-FIB0 K9F1G08U0M-PCB0 K9F1G08U0M-PIB0 K9F1G08U0M-VCB0 K9F1G08U0M-VIB0 K9F1G08U0M-YCB0 K9F1G08U0M-YIB0 K9F1G16Q0M K9F1G16Q0M-PCB0 K9F1G16Q0M-PIB0 K9F1G16Q0M-YCB0 K9F1G16Q0M-YIB0 K9F1G16U0M-PCB0 K9F1G16U0M-PIB0 K9F1G16U0M-YCB0 K9F1G16U0M-YIB0 K9F1G08U0A
OCR Text ...IPTION Offered in 128Mx8bit or 64mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical...
Description 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
1Gb Gb 1.8V NAND Flash Errata

File Size 712.11K  /  38 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K9F1G08U0M-FIB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YIB0 K9F1G08U0M-YIB0 K9F1G08Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G16Q0M-YIB0 K9F1G08Q0M-YIB0 K9F1G08U0M-VCB0 K9F1G08U0M-FCB0 K9F1G08Q0M-PCB0 K9F1G08U0M-PCB0 K9F1G16Q0M-PCB0 K9F1G16U0M-PCB0 K9F1G16Q0M-PIB0 K9F1G08Q0M-PIB0 K9F1G08U0M-PIB0 K9F1G16U0M-PIB0 K9F1G08U0M-VIB0
OCR Text ...IPTION Offered in 128Mx8bit or 64mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical...
Description DSUB
DBM25PK
1Gb Gb 1.8V NAND Flash Errata 1Gb的NAND闪存千兆1.8V的勘误表
Industrial Mid-Range Soldering Iron; Power Rating:60W; Tip Temperature:850 F; Features:Incls.: One 67D 1/4" Dia., 3-3/8" L Long-Tapered Diamond-Style Paragon Soldering Tip RoHS Compliant: Yes

File Size 724.12K  /  38 Page

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    Samsung
Part No. K9F1G08U0M
OCR Text ...IPTION Offered in 128Mx8bit or 64mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical...
Description IC,EEPROM,NAND FLASH,128MX8,CMOS,TSSOP,48PIN,PLASTIC
From old datasheet system

File Size 475.80K  /  39 Page

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    K9F1G08D0M K9F1G08Q0M K9F1G16D0M K91G08Q0M K9F1G16Q0M K9F1G16U0M K9F1G08U0M K9F1G08Q0A K9D1G08V0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1G08D0M K9F1G08Q0M K9F1G16D0M K91G08Q0M K9F1G16Q0M K9F1G16U0M K9F1G08U0M K9F1G08Q0A K9D1G08V0M
OCR Text ...IPTION Offered in 128Mx8bit or 64mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical...
Description 64MB & 128MB SmartMediaTM Card
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

File Size 725.13K  /  40 Page

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    K9F1G08

Samsung semiconductor
Part No. K9F1G08
OCR Text ...e type. offered in 128mx8bit or 64mx16bit, the k9f1gxxx0m is 1g bit with spare 32m bit capacity. its nand cell provides the most cost- effective solution for the solid state mass storage market. a program operation can be performed in typi...
Description FLASH MEMORY

File Size 802.40K  /  40 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K9F1G08D0M K9F1G16D0M K9F1G08U0M-YCB00
OCR Text ...e type. offered in 128mx8bit or 64mx16bit, the k9f1gxxx0m is 1g bit with spare 32m bit capacity. its nand cell provides the most cost- effective solution for the solid state mass storage market. a program operation can be performed in typi...
Description Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
128M X 8 FLASH 2.7V PROM, 30 ns, PDSO48

File Size 737.72K  /  40 Page

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    HYNIX SEMICONDUCTOR INC
Part No. H5MS1G62MFP-L3M
OCR Text ...k x16 i/o specification of 1gb (64mx16bit) mobile ddr sdram memory cell array - organized as 4banks of 16,777,216 x16 rev 1.2 / jul. 2008 2 mobile ddr sdram 1g bit (64m x 16bit) h5ms1g62mfp series document title 1gbit (4bank x 16m x 16 ...
Description 64M X 16 DDR DRAM, PBGA60

File Size 1,656.87K  /  62 Page

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For 64mx16bit Found Datasheets File :: 21    Search Time::1.641ms    
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