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  528-byte Datasheet PDF File

For 528-byte Found Datasheets File :: 356    Search Time::2.5ms    
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    MBM30LV0064 MBM30LV0064-PFTN MBM30LV0064-PFTR

Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Part No. MBM30LV0064 MBM30LV0064-PFTN MBM30LV0064-PFTR
OCR Text ... NAND flash memory organized as 528 byte x 16 pages x 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store ECC code(Specifications indecated are on condition that ECC system would be...
Description FLASH MEMORY 64M (8M x 8) BIT NAND-type

File Size 280.47K  /  43 Page

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    AT45DQ161 AT45DQ161-MHD-Y AT45DQ161-MHF-Y AT45DQ161-CCUD-T AT45DQ161-MHF-T AT45DQ161-MHD-T

List of Unclassifed Manufacturers
Part No. AT45DQ161 AT45DQ161-MHD-Y AT45DQ161-MHF-Y AT45DQ161-CCUD-T AT45DQ161-MHF-T AT45DQ161-MHD-T
OCR Text ...age size ? 512 bytes per page ? 528 bytes per page (default) ? page size can be factory pre-configured for 512 bytes ? two fully independent...byte/page program (1 to 512/528 bytes) directly into main memory ? buffer write ? buffer to main me ...
Description 16-Mbit DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum

File Size 2,514.67K  /  82 Page

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    KM29U128IT KM29U128T

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM29U128IT KM29U128T
OCR Text ...Block Erase : (16K + 512)Byte * 528-byte Page Read Operation - Random Access : 10s(Max.) - Serial Page Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(typ.) - Block Erase time : 2ms(typ.) * Command/Address/Data Multiplexed...
Description 16M x 8 Bit NAND Flash Memory

File Size 479.05K  /  26 Page

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    AT45DQ161-MHD-T AT45DQ161-MHF-Y AT45DQ161-MHF-T AT45DQ161-CCUD-T AT45DQ161-MHD-Y AT45DQ161-SSHD-B AT45DQ161-SHD-B AT45DQ

List of Unclassifed Manufacturers
List of Unclassifed Man...
Part No. AT45DQ161-MHD-T AT45DQ161-MHF-Y AT45DQ161-MHF-T AT45DQ161-CCUD-T AT45DQ161-MHD-Y AT45DQ161-SSHD-B AT45DQ161-SHD-B AT45DQ161-SSHD-T
OCR Text ...age size ? 512 bytes per page ? 528 bytes per page (default) ? page size can be factory pre-configured for 512 bytes ? two fully independent...byte/page program (1 to 512/528 bytes) directly into main memory ? buffer write ? buffer to main me ...
Description 16-Mbit DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory with Dual-I/O and Quad-I/O Support

File Size 2,508.92K  /  81 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K9F2808U0A-YCB0 K9F2808U0A-YIB0
OCR Text ... program operation programs the 528-byte page in typically 200 m s and an erase operation can be per- formed in typically 2ms on a 16k-byte block. data in the page can be read out at 50ns cycle time per byte. the i/o pins serve as the ports...
Description Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:11; Connector Shell Size:21; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
TV 79C 79#22D PIN RECP

File Size 356.97K  /  26 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K9F1208D0B-Y K9F1208U0B-Y K9F1208Q0B-F K9F1208Q0B-D K9F1208U0B-V K9F1208D0B-D
OCR Text ...rm ed in typical 200 m s on the 528-byte page and an erase operation can be performed in typical 2ms on a 16k-byte block. data in the page can be read out at 50ns cycle time per byte. the i/o pins serve as the ports for address and data in...
Description 64M x 8 Bit NAND Flash Memory 6400 × 8位NAND闪存
TV 128C 128#22D SKT RECP
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; No. of Contacts:128; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight

File Size 776.53K  /  45 Page

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    K9F2808U0M- K9F2808U0M-YCB0 K9F2808U0M-YIB0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F2808U0M- K9F2808U0M-YCB0 K9F2808U0M-YIB0
OCR Text ...Block Erase : (16K + 512)Byte * 528-byte Page Read Operation - Random Access : 10s(Max.) - Serial Page Access : 50ns(Min.) * Fast Write Cycle Time - Program Time : 200s(typ.) - Block Erase Time : 2ms(typ.) * Command/Address/Data Multiplexed...
Description 16M x 8 Bit NAND Flash Memory

File Size 344.24K  /  26 Page

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    K9F2808U0 K9F2808U0A K9F2808U0A- K9F2808U0A-YCB0 K9F2808U0A-YIB0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F2808U0 K9F2808U0A K9F2808U0A- K9F2808U0A-YCB0 K9F2808U0A-YIB0
OCR Text ...Block Erase : (16K + 512)Byte * 528-byte Page Read Operation - Random Access : 10s(Max.) - Serial Page Access : 50ns(Min.) * Fast Write Cycle Time - Program Time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed...
Description 16M x 8 Bit NAND Flash Memory

File Size 351.20K  /  26 Page

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    TOSHIBA
Part No. TH58NS100DC
OCR Text ...ry (nand e 2 prom) organized as 528 bytes 32 pages 8192 blocks. the device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. ...
Description 1-GBIT (128M x 8 BITS) CMOS NAND E PROM (128M BYTE SmartMedia )

File Size 429.14K  /  43 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K9F6408U0M-TCB0 K9F6408U0M-TIB0
OCR Text ... program operation programs the 528-byte page in typically 200 m s and an erase operation can be performed in typ- ically 2ms on an 8k-byte block. data in the page can be read out at 50ns cycle time per byte. the i/o pins serve as the ports...
Description 8M x 8 Bit NAND Flash Memory

File Size 483.65K  /  26 Page

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