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  500-1300 Datasheet PDF File

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    2SC5014 2SC5014-T1 2SC5014-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5014 2SC5014-T1 2SC5014-T2
OCR Text ...COLLECTOR TO EMITTER VOLTAGE 30 500 VCE = 3 V IC - Collector Current - mA hFE - DC Current Gain 150 0 0.5 VBE - Base to Emitter Vo...1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 2100.00 2200.00 2300.00 2400.00 2500...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 48.18K  /  8 Page

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    2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518

NEC[NEC]
NEC Corp.
Part No. 2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text ...80 A 60 A 40 A 20 A 2 4 6 8 500 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 3 V hFE - DC Current Gain 200 100 50 20 10 20 10...1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 2100.00 2200.00 2300.00 2400.00 2500...
Description Discrete
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 49.94K  /  8 Page

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    AD8605 AD8605ART AD8606 AD8606AR AD8606ARM AD8608 AD8608AR AD8608ARU

Analog Devices
Part No. AD8605 AD8605ART AD8606 AD8606AR AD8606ARM AD8608 AD8608AR AD8608ARU
OCR Text ...350 1 2.67 0.1 60 100 100 30 50 500 3 Units V V pA pA pA pA pA pA V dB V/mV V/C V V mV mV mA dB A A V/s s MHz degrees nV/Hz nV/Hz pA/Hz Conditions VCM = 0V to 3V -40< T A < +125C Input Bias Current IB --2-- REV. Pr0 8/29/2001 PREL...
Description Precision Low noise CMOS Rail-to-Rail Input/Output Operational Amplifiers

File Size 37.13K  /  4 Page

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    AME8815BEDS250 AME8815AEBT180 AME8815AEGT180 AME8815BEBT180 AME8815BEGT180 AME8815AEBT330 AME8815AEGT330 AME8815BEBT330

AME[Analog Microelectronics]
Part No. AME8815BEDS250 AME8815AEBT180 AME8815AEGT180 AME8815BEBT180 AME8815BEGT180 AME8815AEBT330 AME8815AEGT330 AME8815BEBT330 AME8815BEGT330 AME8815AEBT475 AME8815BEBT475 AME8815BEB AME8815AEBT500 AME8815BEBT500 AME8815BECS330 AME8815AEGT475 AME8815BEGT475 AME8815BECS150 AME8815AECS150 AME8815BEGT500 AME8815 AME8815AEBT150 AME8815AEBT250 AME8815AECS180 AME8815AECS250 AME8815AECS330 AME8815AECS475 AME8815AECS500 AME8815AEDS150 AME8815AEDS180 AME8815AEDS250 AME8815AEDS330 AME8815AEDS475 AME8815AEDS500 AME8815AEGT150 AME8815AEGT250 AME8815AEGT500 AME8815BEBT150 AME8815BEBT250 AME8815BECS180 AME8815BECS250 AME8815BECS475 AME8815BECS500 AME8815BEDS150 AME8815BEDS180 AME8815BEDS330 AME8815BEDS475 AME8815BEDS500 AME8815BEGT150 AME8815BEGT250
OCR Text ...V=2.5V 330: V=3.3V 475: V=4.75V 500: V=5.0V Number of Pin S: 2 T: 3 Package B: TO-220 C: TO-252 D: TO-263 G: SOT-223 Operating Temperature 7...1300 800 600 mA mA mA A A % % % % o o Units V % Dropout Voltage VDROPOUT mV Line Reg...
Description 1.5A CMOS LDO

File Size 106.32K  /  17 Page

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    DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25

Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
Part No. DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25
OCR Text ...j = 175C Tj = 25C 1000 500 0 0.5 1.0 1.5 Instantaneous forward voltage, VF - (V) 2.0 0 0 1000 2000 3000 Mea...1300 0.1 Anode side cooled 2 Peak half sine forward current - (kA) Double side cooled ...
Description Rectifier Diode 1849 A, 2900 V, SILICON, RECTIFIER DIODE

File Size 94.85K  /  7 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
Part No. IRF240SMD
OCR Text ...= 25C Negligible 0.8 2.8 1.5 500 5.3 di / dt 100A/ms VDD 50V mC PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) Internal Source Inductance (from centre of source pad to end of source bond wi...
Description    N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))

File Size 22.29K  /  2 Page

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text ... C oss 1000 8 Crss 500 4 0 1 10 100 0 0 20 40 FOR TEST CIRCUIT SEE FIGURE 13 60 80 100 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ...
Description Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

File Size 193.12K  /  10 Page

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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text ...0 Coss 1000 8 Crss 500 4 0 1 10 100 0 0 20 40 FOR TEST CIRCUIT SEE FIGURE 13 60 80 100 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ...
Description Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

File Size 121.12K  /  8 Page

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ...0 C oss 1000 8 C rss 500 4 0 1 10 100 A 0 0 20 40 FO R TE S T CIR C U IT S E E FIG U R E 1 3 60 80 A 100 -VD S , D rain-to-S ourc e V oltage (V ) Q G , Total G ate C harge (nC ) Fig 5. Typical Capac...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

File Size 183.18K  /  10 Page

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