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Mitsubishi Electric Corporation
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| Part No. |
MGF0915A
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| OCR Text |
... high output power po=36.5 dbm(typ.) @f=1.9ghz,pin=23dbm ? high power gain gp=14.5 db(typ.) @f=1.9ghz ? high power added effi...70 80 pae(%) gp pae po vds=10v id=0.8a f=1.9ghz im3,po(scl) vs. pi(scl) -40 -30 -20 -10 0 10 20... |
| Description |
L & S BAND GaAs FET[ SMD non - matched ]
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| File Size |
1,318.88K /
48 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0918A04 MGF0918A_04 MGF0918A
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| OCR Text |
...re
Ratings
-15 -15 400 -1.2 5.0 3 175 -65 to +175
Unit
V V mA mA mA W C C
Electrical characteristics
Symbol
IDSS VGS(off) gm Po...70
Vds=10V VDS=6V Id(off)=150mA ID=0.1A 30 f=1.9GHz
f=1.9GHz
25
60
Po
50 Gp(dB),PAE(%)... |
| Description |
L & S BAND GaAs FET
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| File Size |
43.10K /
4 Page |
View
it Online |
Download Datasheet |
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5.70-5.90ghz Found Datasheets File :: 44 Search Time::1.656ms
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