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  48.0v Datasheet PDF File

For 48.0v Found Datasheets File :: 3320    Search Time::1ms    
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    Micross Components
Part No. ICE15N60
OCR Text ...v/dt ruggedness 50 v/ns v ds = 480v, i d = 15a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 160 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 60 ncm m...
Description N-Channel Enhancement Mode MOSFET

File Size 758.27K  /  4 Page

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    Micross Components
Part No. ICE15N60W
OCR Text ...v/dt ruggedness 50 v/ns v ds = 480v, i d = 15a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 160 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 60 ncm m...
Description N-Channel Enhancement Mode MOSFET

File Size 752.59K  /  4 Page

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    SPA20N60C3 SPB20N60C3 SPI20N60C3 SPP20N60C3

INFINEON[Infineon Technologies AG]
Part No. SPA20N60C3 SPB20N60C3 SPI20N60C3 SPP20N60C3
OCR Text ... Coss Crss V GS=0V, V DS=0V to 480V SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 Conditions min. V DS2*I D*RDS(on)max, ID=13.1A V GS=0V, V DS=25V, f=1MHz Values typ. 17.5 2400 780 50 83 160 10 max. - Unit S pF Effective ou...
Description Cool MOS&#153; Power Transistor
Cool MOS& Power Transistor
Cool MOS™ Power Transistor
Cool MOS Power Transistor

File Size 311.60K  /  14 Page

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    Micross Components
Part No. ICE15N60FP
OCR Text ...v/dt ruggedness 50 v/ns v ds = 480v, i d = 15a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 50 ncm m ...
Description N-Channel Enhancement Mode MOSFET

File Size 742.65K  /  4 Page

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    SPP20N60CFD

INFINEON[Infineon Technologies AG]
Part No. SPP20N60CFD
OCR Text ...rse diode dv/dt IS=20.7A, V DS=480V, T j=125C Symbol ID Value 20.7 13.1 52 690 1 20 40 20 30 208 -55... +150 Unit A ID puls EAS mJ IAR dv/dt VGS VGS Ptot Tj , Tstg A V/ns V W C Gate source voltage Gate source voltag...
Description for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor

File Size 164.33K  /  12 Page

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    Micross Components
Part No. ICE13N65
OCR Text ...v/dt ruggedness 50 v/ns v ds = 480v, i d = 13a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 160 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 60 ncm m...
Description N-Channel Enhancement Mode MOSFET

File Size 755.84K  /  4 Page

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    SPW20N60C3

INFINEON[Infineon Technologies AG]
Part No. SPW20N60C3
OCR Text ...iode dv/dt dv/dt IS=20.7A, VDS=480V, T j=125C A V/ns V W C 2003-09-17 Gate source voltage static VGS VGS Ptot T j , T stg Page 1 Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C Operating and storage temperature ...
Description for lowest Conduction Losses & fastest Switching
Cool MOS™ Power Transistor
Cool MOS Power Transistor

File Size 255.94K  /  12 Page

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    SPW20N60CFD

INFINEON[Infineon Technologies AG]
Part No. SPW20N60CFD
OCR Text ...rse diode dv/dt IS=20.7A, V DS=480V, T j=125C Symbol ID Value 20.7 13.1 52 690 1 20 40 20 30 208 -55... +150 Unit A ID puls EAS mJ IAR dv/dt VGS VGS Ptot Tj , Tstg A V/ns V W C Gate source voltage Gate source voltag...
Description Cool MOSPower Transistor 酷马鞍山⑩功率晶体管
Cool MOS?/a> Power Transistor
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor
for lowest Conduction Losses & fastest Switching

File Size 161.83K  /  12 Page

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    Micross Components
Part No. ICE13N65FP
OCR Text ...v/dt ruggedness 50 v/ns v ds = 480v, i d = 13a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 50 ncm m ...
Description N-Channel Enhancement Mode MOSFET

File Size 748.98K  /  4 Page

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    FCP7N60 FCPF7N60

FAIRCHILD[Fairchild Semiconductor]
Part No. FCP7N60 FCPF7N60
OCR Text ...= 7A VDS = 600V, VGS = 0V VDS = 480V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 3.5A VDS = 40V, ID = 3.5A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) On Characteristics Gate Threshold Voltage S...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 799.38K  /  10 Page

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