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  25 12-g-la Datasheet PDF File

For 25 12-g-la Found Datasheets File :: 6035    Search Time::1.266ms    
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    IRF9953

IRF[International Rectifier]
Part No. IRF9953
OCR Text ... 3 4 6 5 RDS(on) = 0.25 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq...12 ID = -2.3A 1.7 3.4 nC VDS = -10V 1.1 2.2 VGS = -10V, See Fig. 10 9.7 19 VDD = -10V 14 28 ID = -1...
Description Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

File Size 98.36K  /  7 Page

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    IRF9956

IRF[International Rectifier]
Part No. IRF9956
OCR Text ... Limit 62.5 Units C/W 8/25/97 IRF9956 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ ...12 --- --- --- --- 6.9 1.0 1.8 6.2 8.8 13 3.0 190 120 61 Max. Units Conditions --- V VGS = 0V, ID...
Description Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

File Size 98.88K  /  7 Page

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ...A --- S VDS = -25V, ID = -7.2A -25 VDS = -55V, VGS = 0V A -250 VDS = -44V, VGS = 0V, T J = 150C 100 VGS = 20V nA -100 VGS = -20V 19 ID = -7....12 showing the A G integral reverse --- --- -48 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = ...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

File Size 167.05K  /  10 Page

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ... --- S VDS = -25V, I D = -7.2A -25 VDS = -55V, VGS = 0V A -250 VDS = -44V, VGS = 0V, T J = 150C 100 V GS = 20V nA -100 VGS = -20V 19 ID = -7...12 showing the A G integral reverse --- --- -48 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = ...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

File Size 105.16K  /  8 Page

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    IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR

IRF[International Rectifier]
Part No. IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text ...Max. 2.2 40 Units C/W 8/25/97 IRF9Z34NS/L Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS...12) TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 158.36K  /  10 Page

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    IRF9Z34N IRF9Z34NPBF

International Rectifier
Part No. IRF9Z34N IRF9Z34NPBF
OCR Text ... 2.2 --- 62 Units C/W 8/25/97 IRF9Z34N Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ...12) Pulse width 300s; duty cycle 2%. IRF9Z34N 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - ...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.35K  /  8 Page

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    AK4584

Asahi Kasei Microsystems
Part No. AK4584
OCR Text ...SS TVDD 33 32 31 30 29 28 27 26 25 24 23 ROUT LOUT VCOM DZF M/S LRCK BICK SDTI SDTO MCKO2 MCKO1 AK4584VQ Top View MS0118-J-01 -4- ...12 13 14 15 16 17 18 19 20 21 22 Pin Name TEST2 RX3 NC RX4 PDN INT0 INT1 CDTI CDTO CCLK CSN TEST3 TX...
Description 24BIT 96KHZ AUDIO CODEC WITH DIT/DIR

File Size 311.84K  /  53 Page

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    IRFL014N

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFL014N
OCR Text ...0.85A 1.0 VDS = 44V, VGS = 0V A 25 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 11 ID = 1.7A 1.8 nC VDS = 44V 5.0 VGS = 1...12) Pulse width 300s; duty cycle 2%. 2 www.irf.com IRFL014N 100 VGS 15V 10V 8.0V 7....
Description 55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的,1.9AN沟道HEXFET功率MOSFET5V的,1.9A沟道的HEXFET功率马鞍山场效应管)
Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A)
Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)

File Size 140.28K  /  8 Page

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    IRLL110 IRLL110TR

IRF[International Rectifier]
Part No. IRLL110 IRLL110TR
OCR Text ... VDS = 25V, ID = 0.90 A --- --- 25 VDS = 100V, VGS = 0V A --- --- 250 VDS = 80V, VGS = 0V, TJ = 125C --- --- 100 VGS = 10V nA --- --- -100 V...12 --- 18 --- RD = 8.4 , --- --- --- --- --- 4.0 6.0 250 80 15 --- --- --- --- --- pF nH Between le...
Description 1.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)

File Size 213.54K  /  8 Page

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    IRF7204 IRF7204TR

International Rectifier
Part No. IRF7204 IRF7204TR
OCR Text ...--- Max. 50 Units C/W 8/25/97 IRF7204 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ ...12 -VDS , Drain-to-Source Voltage ( V ) QG , Total Gate Charge ( nC ) Fig 5. Typical Capaci...
Description TRI N PLUG M 0-48 NO SEAL
Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A)
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 141.26K  /  9 Page

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For 25 12-g-la Found Datasheets File :: 6035    Search Time::1.266ms    
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