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  20v-100v Datasheet PDF File

For 20v-100v Found Datasheets File :: 8687    Search Time::3.828ms    
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    IRF140SMD

International Rectifier
Seme LAB
Part No. IRF140SMD
OCR Text ...Junction to PCB (Typical) 2 20V (VGS = 0 , Tcase = 25C) (VGS = 0 , Tcase = 100C) 22A 13.9A 88A 75W 0.6W/C 250mJ 5.5V/ns -55 to 150C 300C 1.67C/W 4C/W Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) @ VDD = 25V , L 0.8mH , RG = 25W...
Description N-CHANNEL POWER MOSFET

File Size 22.30K  /  2 Page

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    IRF150SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF150SMD
OCR Text ...Junction to PCB (Typical) 2 20V (VGS = 0 , Tcase = 25C) (VGS = 0 , Tcase = 100C) 27A 19A 108A 100W 0.8W/C 150mJ 5.5V/ns -55 to 150C 300C 1.25C/W 3C/W Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) @ VDD = 25V , L 0.3mH , RG = 25W...
Description N-CHANNEL POWER MOSFET

File Size 22.29K  /  2 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
Part No. IRF240SMD
OCR Text ...Junction to PCB (Typical) 2 20V (VGS = 0 , Tcase = 25C) (VGS = 0 , Tcase = 100C) 13.9A 8.8A 56A 75W 0.6W/C 450mJ 5.0V/ns -55 to 150C 300...100V ID = 13.9A RG = 9.1W ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pu...
Description    N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))

File Size 22.29K  /  2 Page

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    IRF250SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF250SMD
OCR Text ...Junction to PCB (Typical) 2 20V (VGS = 0 , Tcase = 25C) (VGS = 0 , Tcase = 100C) 22A 14A 88A 100W 0.8W/C 500mJ 5.0V/ns -55 to 150C 300C ...100V ID = 22A RG = 2.35W ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pul...
Description N.CHANNEL POWER MOSFET

File Size 23.37K  /  2 Page

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    IRF3710L IRF3710S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710L IRF3710S
OCR Text ..., VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 190 ID = 28A 26 nC VDS = 80V 82 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 28A ns --- RG = 2.5 --- RD = 1.7, See Fig. 10 Between lead, nH --- and center of die contact --- VG...
Description Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A)
Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)

File Size 180.61K  /  10 Page

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ..., VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 28A 26 nC VDS = 80V 43 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 28A ns --- RG = 2.5 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 92.57K  /  8 Page

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ...250 A V/ C ID=250 A V nA VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150 C VGS=10V,ID=7A VDS=40V,ID=7A 4 O 4 O VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=14A, RG=12 See Fig 13 VDS=80V,VGS=10V, ID=14A See Fig 6 & Fig 12 45 OO 45 OO ...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 253.11K  /  7 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ... VGS = 0V, T J = 150C 100 VGS = 20V nA -100 VGS = -20V 44 ID = 9.0A 6.2 nC VDS = 80V 21 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 9.0A ns --- RG = 12 --- RD = 5.5, See Fig. 10 Between lead, 7.5 --- nH and center of die contact 6...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...ID 3.6A 5.1A 8.0A 800 RG 20V tp D .U .T IA S + V - DD A 600 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) IAS ...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 125.49K  /  10 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...ID 3.6A 5.1A 8.0A 800 RG 20V tp D .U .T IA S + V - DD A 600 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) IAS ...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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