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  200-ft. Datasheet PDF File

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    2SA1123 2SC2631

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PANASONIC[Panasonic Semiconductor]
Part No. 2SA1123 2SC2631
OCR Text ...nit A V V -150 -5 130 450 -1 200 5 150 300 VCE(sat) V MHz pF mV *h FE Rank classification R 130 ~ 220 S 185 ~ 330 T 260 ~...fT -- IE VCB=-10V Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (M...
Description Silicon PNP epitaxial planer type

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    2SA1124

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1124
OCR Text ...nit A V V -150 -5 130 450 -1 200 5 150 300 VCE(sat) V MHz pF mV *h FE Rank classification R 130 ~ 220 S 185 ~ 330 T 260 ~...fT -- IE VCB=-10V Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (M...
Description Silicon PNP epitaxial planer type

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    2SA1127

Panasonic Semiconductor
Part No. 2SA1127
OCR Text ... (Ta=25C) Ratings -60 -55 -7 -200 -100 400 150 -55 ~ +150 Unit V V V mA mA mW C C 13.50.5 5.10.2 s Features 0.45 -0.1 1.27 ...fT NV V V MHz mV *h FE Rank classification R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE R...
Description Silicon PNP epitaxial planer type

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    2SA1128

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1128
OCR Text ...Ta=25C 700 -1.0 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 0 0 -1 -2 -3 -4 -5 -6 IB=-10A 2SA1128 IC -- VCE Collector to em...fT -- IE VCB=-10V Ta=25C Base to emitter saturation voltage VBE(sat) (V) 500 Transition fr...
Description Silicon PNP epitaxial planer type

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    2SA1171

HITACHI[Hitachi Semiconductor]
Part No. 2SA1171
OCR Text ...-90 -- 1 Typ -- -- -- -- -- 200 1.6 Max -- -0.5 800 -0.75 -0.5 -- -- Unit V A Test conditions I C = -1 mA, RBE = VCB = -75 V, ...fT Cob 250 -- -- -- -- V V MHz pF VCE = -12 V, IC = -2 mA I C = -10 mA, IB = -1 mA VCE = -1...
Description Silicon PNP Epitaxial

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    2SA1190 2SA1191

HITACHI[Hitachi Semiconductor]
Part No. 2SA1190 2SA1191
OCR Text ...12 -15 -8 -10 -5 A 200 -4 IB = 0 0 50 100 150 Ambient Temperature Ta (C) 0 -20 -40 -60 -80 -100 Collector to Emitter Volt...fT (MHz) IC = 10 IB Pulse -3 25 1,000 Gain Bandwidth Product vs. Collector Current VCE = -6 V 500...
Description Silicon PNP Epitaxial

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    2SA2009

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2009
OCR Text ...FLAT VCB = -5 V, IE = 2 mA, f = 200 MHz Min Typ 0 to 0.1 0.90.1 0.9+0.2 -0.1 Max -100 -1 Unit nA A V V V VCBO VCEO VEBO hFE VCE(sat) NV fT -120 -120 -5 180 130 120 700 - 0.6 Collector to emitter saturation volt...
Description    Silicon PNP epitaxial planer type

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    2SA2010

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2010
OCR Text ...MHz VCB = -10 V, IE = 50 mA f = 200 MHz -15 -15 -5 200 100 -140 -270 40 180 35 110 10 -320 mV mV pF MHz ns ns ns 560 Min Typ Max - 0.1 Unit A V V V Note) *1: Rank classification *2: Reference to the measurement circuit. 0 to 0.1 1:...
Description    Silicon PNP epitaxial planer type

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    2SA2011 2SC5564

SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Part No. 2SA2011 2SC5564
OCR Text ... IC=(-)500mA VCB=(-)10V, f=1MHz 200 (350) 380 (41)23 Conditions Ratings min typ max (-)0.1 (-)0.1 560 MHz MHz pF Unit A A Continued on ne...fT - MHz 3 2 Gain-Bandwidth Product, fT - MHz 1000 7 5 f T -- IC 2SA2011 VCE=--2V 10...
Description    DC/DC Converter Applications
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications 直流/直流转换器应

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    2SA2012 2SC5565

SANYO[Sanyo Semicon Device]
Part No. 2SA2012 2SC5565
OCR Text ... IC=(-)500mA VCB=(-)10V, f=1MHz 200 (350) 420 (30)20 Conditions Ratings min typ max (-)0.1 (-)0.1 560 MHz MHz pF Unit A A Continued on ne...fT - MHz 5 3 2 Gain-Bandwidth Product, fT - MHz 7 7 5 3 2 100 7 5 3 2 100 7 5 3 2 ...
Description    DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

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