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Bourns Inc.
BOURNS[Bourns Electronic Solutions]
Bourns, Inc.
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| Part No. |
2FAJ-M16R
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| OCR Text |
...vice are shown below.
3.000 (0.1181) 0.750 0.05 (0.0295 0.0020)
Recommended Pad Layout
0.700 (0.0276) 4.000 (0.1575)
FAJ B0412
3.000 (0.1181) 0.300 (0.0118) 0.500 (0.0197)
1.000 (0.0394)
How to Order
1.50 (0.059) 0.230 ... |
| Description |
Integrated Passive & Active Device using MLP
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| File Size |
278.34K /
4 Page |
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it Online |
Download Datasheet
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Vishay
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| Part No. |
SIC769CD
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| OCR Text |
1181-rev. b, 29-jun-09 www.vishay.com 1 new product integrated drmos power stage description the sic769cd is an integrated solution that contains pwm optimized n-channel mosfets (high side and low side) and a full featured mosfet driver ic... |
| Description |
Integrated DrMOS Power Stage
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| File Size |
477.50K /
16 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STT03L06
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| OCR Text |
...9 0.0300 0.0330 0.0280 0.0311 0.1181 0.1220 0.1161 0.1200 0.0020 0.1181 0.1378 0.2560 bsc 0.2760 0.2874 0.1378 0.1457 10 0.0110 0.0130 common bsc 6.50 6.70 0.2480 0.2638 c1 (c) b3 b2 section c-c c1 (c) b1 b section b-b 6 stt03l06
stt03... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
133.05K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STT03L03
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| OCR Text |
...9 0.0300 0.0330 0.0280 0.0311 0.1181 0.1220 0.1161 0.1200 0.0020 0.1181 0.1378 0.2560 bsc 0.2760 0.2874 0.1378 0.1457 10 0.0110 0.0130 common bsc 6.50 6.70 0.2480 0.2638 c1 (c) b3 b2 section c-c c1 (c) b1 b section b-b 6 stt03l03
stt03... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
132.70K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STT02N20
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| OCR Text |
...9 0.0300 0.0330 0.0280 0.0311 0.1181 0.1220 0.1161 0.1200 0.0020 0.1181 0.1378 0.2560 bsc 0.2760 0.2874 0.1378 0.1457 10 0.0110 0.0130 common bsc 6.50 6.70 0.2480 0.2638 c1 (c) b3 b2 section c-c c1 (c) b1 b section b-b 6 stt02n20
stt02... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
132.69K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
STT02N10
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| OCR Text |
...9 0.0300 0.0330 0.0280 0.0311 0.1181 0.1220 0.1161 0.1200 0.0020 0.1181 0.1378 0.2560 bsc 0.2760 0.2874 0.1378 0.1457 10 0.0110 0.0130 common bsc 6.50 6.70 0.2480 0.2638 c1 (c) b3 b2 section c-c c1 (c) b1 b section b-b 6 stt02n10
stt02... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
132.77K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STT01L10
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| OCR Text |
...9 0.0300 0.0330 0.0280 0.0311 0.1181 0.1220 0.1161 0.1200 0.0020 0.1181 0.1378 0.2560 bsc 0.2760 0.2874 0.1378 0.1457 10 0.0110 0.0130 common bsc 6.50 6.70 0.2480 0.2638 c1 (c) b3 b2 section c-c c1 (c) b1 b section b-b 6 stt01l10
stt01... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
124.49K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STT01L07
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| OCR Text |
...9 0.0300 0.0330 0.0280 0.0311 0.1181 0.1220 0.1161 0.1200 0.0020 0.1181 0.1378 0.2560 bsc 0.2760 0.2874 0.1378 0.1457 10 0.0110 0.0130 common bsc 6.50 6.70 0.2480 0.2638 c1 (c) b3 b2 section c-c c1 (c) b1 b section b-b 6 stt01l07
stt01... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
131.92K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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