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Bourns, Inc.
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| Part No. |
1820-10-A1 1820-10-XX
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| OCR Text |
...nst surge currents in excess of 10,000 amperes Convenient mounting and grounding to any flat surface or to Din 1 (TS-32) or DIN-3 (TS-35) ra...BASE MODEL NUMBER (see below for Clamp designation) PROTECTIVE CHARACTERISTICS Peak Clamping Voltage... |
| Description |
N/A
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| File Size |
500.74K /
2 Page |
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it Online |
Download Datasheet
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Philips
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| Part No. |
BLS2731-10
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| OCR Text |
10 microwave power transistor m3d324
1998 nov 25 2 philips semiconductors product speci?cation microwave power transistor bls2731-10 featu...base structure provides high emitter efficiency multicell geometry improves power sharing and reduc... |
| Description |
Microwave power transistor
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| File Size |
85.62K /
12 Page |
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it Online |
Download Datasheet |
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TY Semicondutor
TY Semiconductor Co., Ltd
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| Part No. |
BCP54-10 BCP56-10 BCP56
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| OCR Text |
...a i e =0a;v cb = 30 v; tj = 150 10 a emitter cut-off current i ebo i c =0a;v eb = 5 v 100 na i c =5ma;v ce =2v 63 i c =150 ma; v ce = 2 v 63...base-emitter voltage v be i c =0.5a;v ce =2v 1 v transition frequency f t i c =10ma;v ce = 5 v; f = ... |
| Description |
NPN Medium Power Transistor
High collector current 1.3 W power dissipation. emitter-base voltage VEBO 5 V
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| File Size |
177.14K /
2 Page |
View
it Online |
Download Datasheet |
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