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  0.7-0.7mm Datasheet PDF File

For 0.7-0.7mm Found Datasheets File :: 6834    Search Time::3.422ms    
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    2SD973A 2SD973 2SD0973

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD973A 2SD973 2SD0973
OCR Text 0.4 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q q 1.5 1.00.1 Low collector to emitter saturation voltage VCE(sat). M t...7 Unit A V V V 340 Emitter to base voltage Forward current transfer ratio Collector to emit...
Description Silicon NPN epitaxial planer type small signal transistor
Silicon NPN epitaxial planer type(For low-frequency power amplification) 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR

File Size 47.93K  /  3 Page

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    K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text ... History Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add t...7 Oct. 28th 2003 2.8 1. AC parameters are changed. tWC tWH tWP tRC tREH tRP tREA tCEA K9F56...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 679.73K  /  42 Page

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    K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text ... History Revision No. History 0.0 0.1 Initial issue. At Read2 operation in X16 device : A3 ~ A7 are Don' care ==> A3 ~ A7 are "L" t 1. IOL...7. tRHZ is divide into tRHZ and tOH.(page 12) - tRHZ : RE High to Output Hi-Z - tOH : RE High to Out...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 601.33K  /  34 Page

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    K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U0C-D K9F5608U0C-DCB0 K9F5608U0C-DIB0 K9F5608U0C-F K9F5608U0C-FCB0 K9F5608U0C-FIB0 K9F5608U0C-H K9F5608U0C-HCB0 K9F5608U0C-HIB0 K9F5608U0C-P K9F5608U0C-PCB0 K9F5608U0C-PIB0 K9F5608U0C-V K9F5608U0C-VCB0 K9F5608U0C-VIB0 K9F5608U0C-Y K9F5608U0C-YCB0 K9F5608U0C-YIB0 K9F1208Q0A K9F5616U0C K9F5616U0C-D K9F5616U0C-DCB0 K9F5616U0C-DIB0 K9F5616U0C-H K9F5616U0C-HCB0 K9F5616U0C-HIB0 K9F5616U0C-P K9F5616U0C-PCB0 K9F5616U0C-PIB0 K9F5616U0C-Y K9F5616U0C-YCB0 K9F5616U0C-YIB0 K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-H K9F5616Q0C-HCB0 K9F5616Q0C-HIB0 K9F1208Q0A-XXB0 K9F5608D0C-H K9F5608D0C-D K9F5608D0C-Y K9F5608D0C-P K9F5608U0M
OCR Text ... History Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add t...7 ~ 3.6V X16 X8 Vcc Range 1.70 ~ 1.95V Organization X8 X16 TSOP1 TBGA WSOP1 TSOP1 TBGA PKG Type TBGA...
Description 32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata

File Size 653.97K  /  39 Page

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    MAX1020 MAX1020BETX MAX1021 MAX1021BETX MAX1022 MAX1022BETX MAX1023 MAX1023BETX MAX1057 MAX1057BETM MAX1058 MAX1058BETM

MAXIM[Maxim Integrated Products]
Part No. MAX1020 MAX1020BETX MAX1021 MAX1021BETX MAX1022 MAX1022BETX MAX1023 MAX1023BETX MAX1057 MAX1057BETM MAX1058 MAX1058BETM
OCR Text ...s) and low digital feedthrough (0.5nV*s) of the integrated octal DACs make these devices ideal for digital control of fast-response closed-l...7 to 3.6 4.75 to 5.25 2.7 to 3.6 2.7 to 3.6 4.75 to 5.25 10 10 10 10 10 10 8 8 12 12 16 16 8 8 8 8 8...
Description 10-Bit Multichannel ADCs/DACs with FIFO Temperature Sensing and GPIO Ports
10-Bit, Multichannel ADCs/DACs with FIFO, Temperature Sensing, and GPIO Ports

File Size 1,321.21K  /  47 Page

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    2SC4391

PANASONIC[Panasonic Semiconductor]
Part No. 2SC4391
OCR Text ...mplementary to 2SA1674 6.90.1 0.15 Unit: mm 1.05 0.05 2.50.1 (1.45) 0.8 0.5 4.50.1 0.45-0.05 2.50.1 0.7 4.0 s Features q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Em...
Description Silicon NPN epitaxial planer type(For low-frequency output amplification)

File Size 38.01K  /  2 Page

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    2SJ518

HITACHI[Hitachi Semiconductor]
Part No. 2SJ518
OCR Text ... * Low on-resistance R DS(on) = 0.35 typ. at (V GS = -10V, ID = -1A) * Low drive current * 4 V gete drive devices * High speed switching ...7 2SJ518 Package Dimensions Unit: mm 4.5 0.1 0.4 1.8 max 1.5 0.1 0.44 max f1 ...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 46.74K  /  9 Page

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    2SJ574

HITACHI[Hitachi Semiconductor]
Part No. 2SJ574
OCR Text ... Conditions I D = -100 A, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -30 V, VGS = 0 I D = -10A, VDS = -5 V ID = -150 mA,VGS = -...7 V -6 V -5 V Pulse Test I D (A) Typical Transfer Characteristics -1.0 25 C 75 C -0.6 Tc = -25 C...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.90K  /  8 Page

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    2SJ575

Hitachi Semiconductor
Part No. 2SJ575
OCR Text ... Conditions I D = -100 A, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -30 V, VGS = 0 I D = -10A, VDS = -5 V ID = -50 mA,VGS = -1...7 V -6 V Pulse Test I D (A) Typical Transfer Characteristics -0.5 25 C 75 C -0.3 Tc = -25 C I...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.55K  /  8 Page

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For 0.7-0.7mm Found Datasheets File :: 6834    Search Time::3.422ms    
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