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  0.5-2ghz Datasheet PDF File

For 0.5-2ghz Found Datasheets File :: 1492    Search Time::2.079ms    
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    BFR520.215

NXP Semiconductors
Part No. BFR520.215
OCR Text ...ollector-emitter voltage r be =0 ? --15v i c collector current (dc) - - 70 ma p tot total power dissipation up to t sp =97 ?c [1] - - 300 ...5. limiting values [1] t sp is the temperature at the soldering point of the collector tab. 6. th...
Description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package

File Size 167.75K  /  14 Page

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    ZL40810 ZL40810DCE ZL40810DCF

ZARLINK[Zarlink Semiconductor Inc]
Part No. ZL40810 ZL40810DCE ZL40810DCF
OCR Text ... 6,7 6,7 6,7 6,7 45 -3 900 2 0.35 96 136 11 -8 -15 -10 8 11 -10 0 mA mA GHz dBm dBm dBm dBm dBm V/s Input stage bias current Divide...5 to Figure 8. 1 -1 -147 50 55 1.2 Vp-p dBm dBc/Hz % 3 Zarlink Semiconductor Inc. ZL408...
Description 10-GHz Fixed Modulus ÷ 8
10-GHz Fixed Modulus 8
10-GHz Fixed Modulus ± 8

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    ALM31222-BLKG ALM31222-TR2G

AVAGO TECHNOLOGIES LIMITED
Part No. ALM31222-BLKG ALM31222-TR2G
OCR Text ... avago technologies proprietary 0.25um gaas en- hancement-mode phemt process. all matching components are fully integrated within the modul...5.0 x 6.0 x 1.1 mm 3 22-lead multiple-chips-on-board (mcob) module package. component image 5.0 x...
Description 1-Watt High Linearity Amplifier

File Size 196.91K  /  13 Page

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    CHR2297

United Monolithic Semiconductors
Part No. CHR2297
OCR Text ...factured with a p-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...5 4 3 2 1 0 34 35 36 37 38 39 40 41 42 43 44 45 46 RF Frequency (GHz) F_IF= 2GHz F_IF= 6GHz Bro...
Description 36-44GHz Multifunction (MFC) Down-Converter

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    MAX2205 MAX2205EBS MAX2205-MAX2208 MAX2206EBS MAX2207EBS MAX2208EBS MAX2208

Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
Part No. MAX2205 MAX2205EBS MAX2205-MAX2208 MAX2206EBS MAX2207EBS MAX2208EBS MAX2208
OCR Text ...08 come in a space-saving 2 2, 0.5mm-pitch UCSPTM and require only three external components. UCSP Occupies Only 1mm2 o Internal Temp...5.0V, SHDN = +2.0V, no RF signal applied, TA = -40C to +85C. Typical values are at VCC = +2.85V and ...
Description 射频功率检波器的UCSP封装
Quadruple Bus Buffer Gates With 3-State Outputs 14-TSSOP -40 to 85
Quadruple Bus Buffer Gates With 3-State Outputs 14-SO -40 to 85
RF Power Detectors in UCSP

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    TIM3742-8SL

Toshiba Semiconductor
Part No. TIM3742-8SL
OCR Text ...m dB A dB % dBc A C MIN. 38.5 9.0 -42 TYP. MAX. 39.5 10.0 2.2 36 -45 2.2 2.6 0.6 2.6 80 CONDITIONS VDS= 10V f= 3.7 to 4.2GHz add IM3 IDS2 Tch Two-Tone Test Po=28.5dBm (Single Carrier Level) (VDS X IDS +Pin-P1dB) X Rth(...
Description MICROWAVE POWER GaAs FET

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    EPA120D

Excelics Semiconductor, Inc.
Part No. EPA120D
OCR Text ...typical power gain at 2ghz ? 0.5 x 1200 micron recessed ?mushroom? gate ? si 3 n 4 passivation and plated heat sink ? advanced epitaxial doping profile provides high power efficiency, linearity and reliability ?...
Description High Efficiency Heterojunction Power FET

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    MAX3800 MAX3800UGJ MAX3800UHJ

Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
Part No. MAX3800 MAX3800UGJ MAX3800UHJ
OCR Text ..................................-0.5V to +6.0V Voltage at LOS, RMOD, and CIM...............-0.5V to (VCC + 0.5V) Voltage at EIN+, EIN-, DIN+,...5 0.5 2.4 0.4 62.5 CONDITIONS Includes external load current (Note 1) VCC - 0.6 400 45 750 400 50 55...
Description 640 x 480 pixel format, CCFL Backlight LINE TRANSCEIVER, QFP32
3.2Gbps Adaptive Equalizer and Cable Driver

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    TIM3742-4UL

Toshiba Semiconductor
Part No. TIM3742-4UL
OCR Text ...UNIT dBm dB A dB % MIN. 35.5 11.0 -44 TYP. MAX. 36.5 12.0 1.1 38 -47 1.1 1.3 0.6 1.3 80 CONDITIONS VDS= 10V f = 3.7 to 4.2GHz add IM3 Two-Tone Test Po= 25.5dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) X Rth(...
Description MICROWAVE POWER GaAs FET

File Size 168.29K  /  4 Page

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