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  0.49a Datasheet PDF File

For 0.49a Found Datasheets File :: 164    Search Time::1.766ms    
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    IRGPC40 IRGPC40F

IRF[International Rectifier]
Part No. IRGPC40 IRGPC40F
OCR Text ...0 20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Paramete...49A See Fig. 2, 5 -- 1.9 -- IC = 27A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -12 -- mV/C VCE ...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)

File Size 214.50K  /  6 Page

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    IRG4BC40F

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRG4BC40F
OCR Text ... 20 15 160 65 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Paramete...49A See Fig.2, 5 V -- IC = 27A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- ...
Description 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) 绝缘栅双TRANSISOR(VCES和\u003d 600V电压的Vce(on)典\u003d 1.50V,@和VGE \u003d 15V的,集成电路\u003d 27A条)

File Size 165.44K  /  8 Page

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    IRL1404

http://
IRF[International Rectifier]
Part No. IRL1404
OCR Text ...110 640 200 1.3 20 620 95 20 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resist...49A 101A BOTTOM 121A TOP RG 20V D.U.T IAS tp + V - DD 900 A 0.01 600 Fig 1...
Description HEXFET Power MOSFET

File Size 121.99K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. HUF75329S3 HUF75329S3S HUF75329P3 HUF75329G3 HUF75329S3ST
OCR Text 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET(R) process. This a...49A, 55V * Ultra Low On-Resistance, rDS(ON) = 0.024 * Temperature Compensating PSPICE(R) and SABERTM...
Description 49A 55V 0.024 Ohm N-Channel UltraFET Power MOSFETs
49A, 55V, 0.024 OHM, N-CHANNEL ULTRAFET POWER MOSFETS

File Size 247.57K  /  10 Page

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    IRG4PC40FD IRG4PC40 IRG4PC40FDPBF

IRF[International Rectifier]
Part No. IRG4PC40FD IRG4PC40 IRG4PC40FDPBF
OCR Text ...200 20 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A V W C Thermal Resistance Paramet...49A See Fig. 2, 5 IC = 27A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 27A...
Description 600V Fast 1-8 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)

File Size 212.91K  /  10 Page

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    IRG4PC40 IRG4PC40F IRG4PC40F-EPBF

IRF[International Rectifier]
Vishay Intertechnology, Inc.
Part No. IRG4PC40 IRG4PC40F IRG4PC40F-EPBF
OCR Text ... 20 15 160 65 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Paramete...49A See Fig.2, 5 V -- IC = 27A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- ...
Description 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
49 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN

File Size 144.13K  /  8 Page

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    INTERSIL[Intersil Corporation]
Part No. HRFZ44N FN4752
OCR Text 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFETTM process. This advanc...49A, 55V * Simulation Models - Temperature Compensated PSPICE(R) and SABER(c) Electrical Models - Sp...
Description From old datasheet system
49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET

File Size 134.46K  /  9 Page

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    IRFI1010N IRFI1010

IRF[International Rectifier]
Part No. IRFI1010N IRFI1010
OCR Text ...ed D VDSS = 55V RDS(on) = 0.012 G ID = 49A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, co...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A)
Power MOSFET(Vdss=55V Rds(on)=0.012ohm Id=49A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A)

File Size 105.23K  /  8 Page

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    IRHNA57264SE

International Rectifier
Part No. IRHNA57264SE
OCR Text ...A57264SE 100K Rads (Si) RDS(on) 0.06 ID 49A IRHNA57264SE 250V, N-CHANNEL 4# TECHNOLOGY c c SMD-2 International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have b...
Description 250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package
RADIATION HARDENED POWER MOSFET

File Size 143.25K  /  8 Page

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    Atmel corp
Part No. U6433BNBSP U6433B
OCR Text ...rward current Pins 2 and 6 tp = 0.1 ms Pins 2 and 6 tp = 300 ms Pins 2 and 6 tp = 300 ms Pin 8 Pin 3 SO 8 SO 8 Symbol VS IFSM IO Ptot Tj Tam...49a to GND Symbol f1 f2 f2 Pin 7 VR3 VR3 Rp PL 1 Min. 47 37 2.15 50 43 47 2 f1 53 45 49 Typ. Max. ...
Description Lamp load > 1 W, 18 mOhm shunt
From old datasheet system

File Size 51.64K  /  5 Page

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