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  0.30-0.60v Datasheet PDF File

For 0.30-0.60v Found Datasheets File :: 10661    Search Time::2.016ms    
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    2SB949 2SB949A 2SD1275A 2SD1275

PANASONIC[Panasonic Semiconductor]
Part No. 2SB949 2SB949A 2SD1275A 2SD1275
OCR Text 0.70.1 For power amplification and switching Complementary to 2SD1275 and 2SD1275A 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 Unit: mm ...30.2 Solder Dip 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 emitter voltage 2SB949A Emitter to...
Description Silicon PNP epitaxial planar type Darlington

File Size 61.28K  /  2 Page

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    2SB950 2SB950A 2SD1276A 2SD1276

PANASONIC CORP
PANASONIC[Panasonic Semiconductor]
Part No. 2SB950 2SB950A 2SD1276A 2SD1276
OCR Text ...tary to 2SD1276 and 2SD1276A 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 Unit: mm 7.50.2 s Features q q q High foward current ...30.2 Solder Dip 0.5 -0.1 0.80.1 +0.2 2.540.25 5.080.5 1 2 emitter voltage 2SB950A Emi...
Description Silicon PNP epitaxial planar type Darlington(For power amplification and switching)

File Size 60.93K  /  2 Page

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    2SB951 2SB951A 2SD1277A 2SD1277

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SB951 2SB951A 2SD1277A 2SD1277
OCR Text 0.70.1 For midium-speed switching Complementary to 2SD1277 and 2SD1277A 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 Unit: mm 7.50.2 ...30.2 14.00.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Col...
Description Silicon PNP epitaxial planar type Darlington(For midium-speed switching)

File Size 69.42K  /  3 Page

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    2SB954 2SB954A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB954 2SB954A
OCR Text ... s Features q q q Unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 s Absolute Maximum Ratings (TC=25C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings...
Description Silicon PNP epitaxial planar type(For power amplification)

File Size 45.35K  /  2 Page

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    2SD1149

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1149
OCR Text 0.2 2.8 -0.3 s Features q q q q 0.650.15 1.5 -0.05 +0.25 0.650.15 +0.2 1.1 -0.1 Parameter Collector to base voltage...30 30 20A 20 10A 10 80 20 40 10 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 ...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 38.00K  /  2 Page

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    2SD389

WS
WINGS[Wing Shing Computer Components]
Part No. 2SD389
OCR Text ...fT Test Condition VCB= 60V , IE=0 VEB= 7V , IC=0 VCE= 3V , IC=1A IC=2A , IB=0.2A VCE= 5V , IC=0.5A Min Typ Max 100 100 70 1.0 18 V MHZ Unit A A Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(85...
Description LOW FREQUENCY POWER AMPLIFIER(NPN)

File Size 68.25K  /  1 Page

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    HTIP42C HTIP42

HSMC CORP.
HI-SINCERITY MICROELECTRONICS, CORP.
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HTIP42C HTIP42
OCR Text ...V V Test Conditions IC=-1mA, IE=0 IC=-30mA, IB=0 VCE=-100V VCE=-60V VEB=-5V IC=-6A, IB=-600mA IC=-6A, VCE=-4V IC=-0.3A, VCE=-4V IC=-3A, VCE=-4V IC=-0.1A, VCE=-5V, f=1MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% MHz HTIP42C HSM...
Description PNP EPITAXIAL PLANAR TRANSISTOR 进步党外延平面晶体管

File Size 27.00K  /  3 Page

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    IRF3000

IRF[International Rectifier]
Part No. IRF3000
OCR Text 0.40W@VGS = 10V VDSS 300V ID 1.6A l Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capac...30 8.9 -55 to + 150 300 (1.6mm from case ) Units A W W/C V V/ns C Thermal Resistance Symbol ...
Description 300V Single N-Channel HEXFET Power MOSFET in a SO-8 package
SMPS MOSFET

File Size 119.33K  /  8 Page

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    IRF3007

IRF[International Rectifier]
Part No. IRF3007
OCR Text ... VDSS = 75V G S RDS(on) = 0.0126 ID = 75A Description Specifically designed for Automotive applications, this design of HEXFET(R) ...30 12 80 55 49 4.5 7.5 3270 520 78 3500 340 640 Max. Units Conditions --- V VGS = 0V, ID = 250A -...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 146.42K  /  9 Page

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    IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text ...l D VDSS = -60V RDS(on) = 0.50 G S ID = -6.7A Third Generation HEXFETs from International Rectifier utilize advanced processi...30 (.9 5 7) 2 3 .90 (.9 4 1) TR L 1 0. 90 (.4 29 ) 1 0. 70 (.4 21 ) 1. 75 (.0 69 ) 1. 25 (.0 49 ...
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 357.87K  /  10 Page

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For 0.30-0.60v Found Datasheets File :: 10661    Search Time::2.016ms    
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