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INFINEON[Infineon Technologies AG]
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Part No. |
BFP196
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OCR Text |
...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 50 mA, VCE = 8 V hFE 50 100 200 IEBO ... |
Description |
NPN Silicon RF Transistor
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File Size |
78.06K /
7 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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Part No. |
BFP196W
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OCR Text |
...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 50 mA, VCE = 8 V hFE 50 100 200 IEBO ... |
Description |
NPN Silicon RF Transistor
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File Size |
77.94K /
7 Page |
View
it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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Part No. |
BFP193W
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OCR Text |
...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200 IEBO ... |
Description |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers NPN Silicon RF Transistor
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File Size |
74.15K /
7 Page |
View
it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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Part No. |
BFP183
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OCR Text |
...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V hFE 50 100 200 IEBO ... |
Description |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA NPN Silicon RF Transistor
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File Size |
77.41K /
7 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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Part No. |
BAT54CXV3T1G BAT54CXV3T1
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OCR Text |
...g Speed * Low Forward Voltage - 0.35 V (Typ) @ IF = 10 mAdc * Pb-Free Package is Available
30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
MAXIMUM RATINGS (TJ = 125C unless otherwise noted)
Rating Reverse Voltage Forward Power Di... |
Description |
Dual Series Schottky Barrier Diodes
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File Size |
43.64K /
4 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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Part No. |
BFP183W
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OCR Text |
...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V hFE 50 100 200 IEBO ... |
Description |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA NPN Silicon RF Transistor
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File Size |
77.25K /
7 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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Part No. |
BFN19 BFN17
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OCR Text |
...eakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 A, IE = 0 Emitter-base breakdown voltage IE = 100 A, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 Collector cutoff current VCB = 200 V, I... |
Description |
PNP Silicon High-Voltage Transistors
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File Size |
46.87K /
5 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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Part No. |
BFN18 BFN16
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OCR Text |
...eakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 A, IE = 0 Emitter-base breakdown voltage IE = 100 A, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 Collector cutoff current VCB = 200 V, I... |
Description |
NPN Silicon High-Voltage Transistors
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File Size |
46.71K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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