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    ST Microelectronics
Part No. STP20NE06LFP
OCR Text ...te drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 20 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forw...e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g ...
Description N-CHANNEL 60V - 0.06 OMH - 20A TO-220/TO-220FP STRIPFET POWER MOSFET

File Size 103.92K  /  9 Page

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    意法半导
Part No. STB60NE06L-16
OCR Text ...ate drain current v ds >i d(on) xr ds(on)max v gs =10v 60 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =30 a 22 23 s c iss c oss c rss input capacitance out...
Description N-Channel 60V-0.014Ω-60A-D2PAK “SINGLE FEATURE SIZETMPower MOSFET(N沟道功率MOSFET)

File Size 38.09K  /  5 Page

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    意法半导
Part No. STP80NF55-07
OCR Text ...te drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 80 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward...e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g ...
Description N-Channel 55V-0.0055Ω-80A- TO-220 STripFET Power MOSFET(N沟道功率MOSFET)

File Size 37.50K  /  5 Page

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    15NA50

STMicroelectronics
Part No. 15NA50
OCR Text ...ate drain current v ds >i d(on) xr ds(on)max v gs =10v 14.6 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =7.5a 9 13 s c iss c oss c rss input capacitance ou...
Description Search --To STH15NA50

File Size 275.26K  /  11 Page

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    STP32N06L

STMicroelectronics
Part No. STP32N06L
OCR Text ...ate drain current v ds >i d(on) xr ds(on)max v gs =10v 32 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =16a 10 22 s c iss c oss c rss input capacitance outp...
Description N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

File Size 232.87K  /  10 Page

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    ST Microelectronics
Part No. STB11NB40
OCR Text ...ate drain current v ds >i d(on) xr ds(on)max v gs =10v 10.7 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =5.3a 5 6.5 s c iss c oss c rss input capacitance o...
Description N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

File Size 246.96K  /  9 Page

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    SGS Thomson Microelectronics
Part No. STP80NF10
OCR Text ...te drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 80 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward...e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g ...
Description N - CHANNEL 100V - 0.014Ohm - 80A TO-220 LOW GATE CHARGE STripFET POWER MOSFET

File Size 48.03K  /  6 Page

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