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08400 25DC2 LX5560L GBI25A06 19080355 GBI25A06 BUT92A 1N4744
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  ultra-sm Datasheet PDF File

For ultra-sm Found Datasheets File :: 1269    Search Time::2.204ms    
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    SPP21N50C3 SPI21N50C3 SPB21N50C3 SPA21N50C3

INFINEON[Infineon Technologies AG]
Part No. SPP21N50C3 SPI21N50C3 SPB21N50C3 SPA21N50C3
OCR Text ...ldwide best RDS(on) in TO 220 * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * ...SM VSD t rr Q rr I rrm dirr /dt Conditions min. TC=25C Values typ. 1 450 9 60 1200 max. 21 63...
Description Cool MOS?/a> Power Transistor
Cool MOS??Power Transistor
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor
for lowest Conduction Losses & fastest Switching

File Size 338.27K  /  13 Page

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    SPB12N50C305

Infineon Technologies AG
Part No. SPB12N50C305
OCR Text ...nary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitan...sm - - 34.8 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t...
Description New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

File Size 506.61K  /  12 Page

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    SPI11N60S5 SPP11N60S5 SPP11N60S509

Infineon Technologies AG
Part No. SPI11N60S5 SPP11N60S5 SPP11N60S509
OCR Text ...nary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitan...sm - - 22 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t r...
Description Cool MOS Power Transistor Feature New revolutionary high voltage technology

File Size 470.02K  /  12 Page

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    BL8506 BL8506-09CRM BL8506-09CRN BL8506-09CSM BL8506-09CT BL8506-09NRM BL8506-09NRN BL8506-09NSM BL8506-09NT BL8506-30CR

List of Unclassifed Man...
ETC[ETC]
List of Unclassifed Manufacturers
Part No. BL8506 BL8506-09CRM BL8506-09CRN BL8506-09CSM BL8506-09CT BL8506-09NRM BL8506-09NRN BL8506-09NSM BL8506-09NT BL8506-30CRN BL8506-30CSM BL8506-30CT BL8506-30NRM BL8506-30NRN BL8506-30NSM BL8506-30NT BL8506-50CRM BL8506-50CRN BL8506-50CSM BL8506-50CT BL8506-50NRM BL8506-50NRN BL8506-50NSM BL8506-50NT BL8506-60CRM BL8506-60CRN BL8506-60CSM BL8506-60CT BL8506-60NRM BL8506-30CRM BL8506-60NT BL8506-60NRN BL8506-60NSM
OCR Text ultra low current consumption (500nA typ. at Vdd=3.0V). It can work at very low voltage, which makes it perfect for system reset. BL8506 is ...SM SOT-89-3 T TO-92 Default Pb Free(c) Output Type N Nch Open-drain C CMOS Detector Voltage 0...
Description High-precision Low Voltage Detector

File Size 268.32K  /  16 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPU01N60C3 SPD01N60C3 Q67040-S4188 Q67040-S4193
OCR Text ...onary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * ...SM Conditions TC=25C Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1...
Description for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
COOL MOS⒙ POWER TRANSISTOR
Cool MOS⑩ Power Transistor
Cool MOSPower Transistor

File Size 275.90K  /  10 Page

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    PSMN1R6-40YLC

NXP Semiconductors
Part No. PSMN1R6-40YLC
OCR Text ...ower superjunction technology ? ultra low qg, qgd, & qoss for high system efficiencies at low and high loads ? ultra low rdson and low paras...sm peak source current pulsed; t p 10 s; t mb = 25 c - 1304 a avalanche ruggedness e ds(al)s non-...
Description N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using NextPower technology

File Size 231.41K  /  14 Page

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    APT6M100K09

Microsemi Corporation
Microsemi, Corp.
Part No. APT6M100K09
OCR Text ... emi/rfi ? low r ds(on) ? ultra low c rss for improved noise immunity ? low gate charge ? avalanche energy rated ? rohs comp...sm v sd t rr q rr dv/dt symbol g fs c iss c rss c oss c o(cr) 4 c o(er) 5 q g q gs q gd t d(on) ...
Description N-Channel MOSFET 6 A, 1000 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 111.93K  /  4 Page

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    PSMN1R0-30YLC

NXP Semiconductors
Part No. PSMN1R0-30YLC
OCR Text ...ower superjunction technology ? ultra low qg, qgd, and qoss for high system efficiencies at low and high loads ? ultra low rdson and low p...sm peak source current pulsed; t p 10 s; t mb = 25 c - 1450 a avalanche ruggedness e ds(al)s non-re...
Description N-channel MOSFET

File Size 384.43K  /  15 Page

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    APT45M100J09

Microsemi Corporation
Part No. APT45M100J09
OCR Text ... emi/rfi ? low r ds(on) ? ultra low c rss for improved noise immunity ? low gate charge ? avalanche energy rated ? rohs comp...sm v sd t rr q rr dv/dt symbol g fs c iss c rss c oss c o(cr) 4 c o(er) 5 q g q gs q gd t d(on) ...
Description N-Channel MOSFET

File Size 114.88K  /  4 Page

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