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LINEAR TECHNOLOGY CORP
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| Part No. |
LTC3411EDDTR LTC3411EDDPBF
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| OCR Text |
...table from 0.8v to 5v. internal sychronous 0.11 power switches with 1.6a peak current ratings provide high ef? ciency. the ltc3411s current mode architecture and external compensation allow the transient response to be optimized over a ... |
| Description |
1.25A, 4MHz, Synchronous Step-Down DC/DC Converter; Package: DFN; No of Pins: 10; Temperature Range: -40°C to 125°C
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| File Size |
248.78K /
24 Page |
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it Online |
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ALLIANCE SEMICONDUCTOR CORP
INTEGRATED SILICON SOLUTION INC
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| Part No. |
AS7C33256NTD18A-100TQI AS7C33256NTD18A-133TQI AS7C33256NTD16A-133TQC AS7C33256NTD16A-100TQC
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| OCR Text |
...rite. this variation of the 4mb sychronous sram uses the no turnaro und delay (ntd) architecture, fea turing an enhanced write operatio n that improves bandwidth over pipelined burst de vices. in a normal pipelined burst device , the write ... |
| Description |
256K X 18 ZBT SRAM, 12 ns, PQFP100
256K X 18 ZBT SRAM, 10 ns, PQFP100
256K X 16 ZBT SRAM, 10 ns, PQFP100
256K X 16 ZBT SRAM, 12 ns, PQFP100
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| File Size |
162.82K /
10 Page |
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it Online |
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ALLIANCE SEMICONDUCTOR CORP
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| Part No. |
AS7C33256NTD18A-183TQC
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| OCR Text |
...rite. this variation of the 4mb sychronous sr am uses the no turnaround delay (ntd ? ) architecture, featuring an enhanced write operation that improves bandwidth over pipeline burst devices. in a normal pi peline burst device, the write d... |
| Description |
256K X 18 ZBT SRAM, 9 ns, PQFP100
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| File Size |
235.40K /
10 Page |
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it Online |
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ALLIANCE SEMICONDUCTOR CORP
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| Part No. |
AS7C33128NTD36A-100BC AS7C33128NTD36A-166TQC
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| OCR Text |
...rite. this variation of the 4mb sychronous sram uses the no turnaro und delay (ntd) architecture, featuring an enhanced write operatio n that improves bandwidth over pipelined burst devices. in a normal pipelined burst device, the write da... |
| Description |
128K X 36 ZBT SRAM, 12 ns, PQFP100
128K X 36 ZBT SRAM, 9 ns, PQFP100
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| File Size |
161.04K /
10 Page |
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it Online |
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