rg-59 pdf Datasheet P15 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : ONTROL MRMS2 MB89P ZX120 TA0327A 86A2477M 1024A EPD5001E
	Product Description
	Full Text Search

rg-59 Datasheet PDF File

For rg-59 Found Datasheets File :: 4053 Search Time::1.906ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BUZ110SL Q67040-S4004-A2
OCR Text	... = 30 V, VGS = 4.5 V, ID = 80 A RG = 2 tr 20 30 Rise time V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 2 td(off) 70 105 ...59 A, VGS = 4.5 V 0.050 Gate threshold voltage V GS(th)= f (Tj) parameter:VGS=VDS,ID = 200A ...
Description	High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) From old datasheet system
File Size	119.33K / 8 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BUZ111SL Q67040-S4003-A2 BUZ111
OCR Text	... = 30 V, VGS = 4.5 V, ID = 80 A RG = 1.3 tr 30 45 Rise time V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 1.3 td(off) 37 ...59 57 55 53 51 49 -60 -20 20 60 100 C 180 Tj Semiconductor Group...
Description	From old datasheet system SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
File Size	118.31K / 8 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BUZ111 BUZ111S Q67040-S4003-A2
OCR Text	...D = 30 V, VGS = 10 V, ID = 80 A RG = 2.4 tr 25 37 Rise time V DD = 30 V, VGS = 10 V, ID = 80 A RG = 2.4 td(off) 30 4...59 57 55 53 51 49 -60 -20 20 60 100 C 180 Tj Semiconductor Group...
Description	High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) From old datasheet system
File Size	120.08K / 8 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CM200DY-28H
OCR Text	..., IC = 200A, VGE1 = VGE2 = 15V, RG = 1.6 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 2.0 Max. 40 14 8 250 400 300 500 300 - Units nF nF nF ns ns ns ns ns C Diode Reverse Recovery Time Diode Reverse Rec...
Description	IGBT Modules:1400V HIGH POWER SWITCHING USE INSULATED TYPE
File Size	49.59K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CM300DY-28H
OCR Text	..., IC = 300A, VGE1 = VGE2 = 15V, RG = 1.0 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 3.0 Max. 60 21 12 250 500 350 500 300 - Units nF nF nF ns ns ns ns ns C Diode Reverse Recovery Time Diode Reverse Re...
Description	IGBT Modules:1400V HIGH POWER SWITCHING USE INSULATED TYPE
File Size	49.35K / 4 Page	View it Online	Download Datasheet

				Sony Corporation
Part No.	ILX128MA
OCR Text	...ence Dynamic range Symbol RR RG RB PRNU PDF VSAT OE SER SEG SEB VDRK DSNU IL IVDD TTE ZO VOS VOS DR Min. 1.33 3.01 1.82 -- -- 2 2 x SE...59 3.38 15 15 -- -- -- -- -- 2.0 5.0 -- 50 -- -- 7.7 200 -- Unit Remarks V/(lx * s) Note...
Description	5350-pixel x 6-line CCD Linear Sensor(Color) 5350-pixel X 6-line CCD Linear Sensor (Color)
File Size	167.70K / 15 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRFP250N IRFP250
OCR Text	... VDD = 100V --- ID = 18A ns --- RG = 3.9 --- RD = 5.5, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of di...59 ) 4 .3 0 (.1 70 ) 3 .7 0 (.1 45 ) LE A D A S S IG N M E N TS 1 2 3 4 G A TE D R A IN SOURCE D R ...
Description	Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) N-Channel(Hexfet Transistors) Power MOSFET(Vdss = 200 V Rds(on)=0.075ohm Id=30A) Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET（减振钢板基本\u003d 200第五的Rdson）\u003d 0.075ohm，身份证\u003d 30A条）
File Size	120.07K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFY140CM
OCR Text	...es 6 and 13 VDD = 50V, ID =16A, RG = 9.1 VGS = 10V ns see figure 10 Measured from the drain lead, 6mm (0.25 in.) from package to center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. Modified MOS...
Description	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=16*A)
File Size	248.13K / 6 Page	View it Online	Download Datasheet

				IXYS, Corp. IXYS[IXYS Corporation]
Part No.	IXFX120N20 IXFK120N20
OCR Text	... 100 A/ms, VDD VDSS TJ 150C, RG = 2 W TC = 25C G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in.) fr...59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 ...
Description	HiPerFET Power MOSFETs CAP 0.01UF 50V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 120 A, 200 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
File Size	47.08K / 2 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	SPD14N05 SPU14N05 Q67040-S4115-A2 Q67040-S4123-A2
OCR Text	...= 30 V, VGS = 10 V, ID = 13.5 A RG = 33 tr 9 15 Rise time V DD = 30 V, VGS = 10 V, ID = 13.5 A RG = 33 td(off) 22 35...59 57 55 53 51 49 -60 -20 20 60 100 C 180 Tj Semiconductor Group...
Description	SIPMOS Power Transistor SIPMOS功率晶体 SIPMOS ? Power Transistor From old datasheet system
File Size	139.85K / 8 Page	View it Online	Download Datasheet

For rg-59 Found Datasheets File :: 4053 Search Time::1.906ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |