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rg-55 u Datasheet PDF File

For rg-55 u Found Datasheets File :: 11355 Search Time::1.89ms
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				FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTG20N60A4 HGTP20N60A4
OCR Text	...CE = 600V VGE = 20V TJ = 150oC, RG = 3, VGE = 15V L = 100H, VCE = 600V IC = 20A, VCE = 300V IC = 20A, VCE = 300V VGE = 15V VGE = 20V Curr...55 115 510 330 MAX 21 18 135 73 600 500 0.43 uNITS ns ns ns ns J J J oC/W Typical Performance Cu...
Description	600V, SMPS Series N-Channel IGBTs
File Size	137.64K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
Part No.	HGTG20N60B3D G20N60B3 G20N60B3D
OCR Text	...ure. 2. VCE = 360V, TC = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES ...55 45 0.76 1.2 V nC nC ns ns ns ns J J V ns ns oC/W oC/W 3. Turn-Off Energy Loss (EOFF) is de...
Description	40A / 600V / uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 40A, 600V, uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 3.3V 36-mc CPLD
File Size	176.68K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTG20N60C3D
OCR Text	... 2. VCE(PK) = 360V, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES ...55 500 500 MAX 250 5.0 1.8 1.9 6.3 250 110 145 32 28 210 98 550 700 uNITS V A mA V V V nA A A V nC n...
Description	3.3V 36-mc CPLD 45A, 600V, uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	120.19K / 8 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXTQ64N25 IXTQ64N25P IXTT64N25P
OCR Text	... 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C 64 160 60 40 1.0 10 400 -55 ... +150 150 -55 ... +150 G D S (TAB) TO-268 (IXTT) G G = Gate S = Source S D = Drain TAB = Drain D (TAB) 1.6 mm (0.062 in.) from cas...
Description	Discrete MOSFETs: Standard N-channel Types PolarHT Power MOSFET
File Size	573.67K / 5 Page	View it Online	Download Datasheet

				Samsung Electronic TFUNK Vishay Telefunken Vishay Intertechnology,Inc.
Part No.	K847PH K827P8 K827PH K817P K817P1 K817P2 K817P3 K817P4 K817P5 K817P6 K817P7 K817P9 K91G08Q0M
OCR Text	...gh input amplitude 96 11698 RG = 50 W tp = 0.01 T tp = 50 ms Channel I Channel II Oscilloscope RL = 1 M W CL = 20 pF IF 0 tp IC 100% ...55 g 6 mm 6 mm after mounting on PC board 14784 Rev. A2, 11-Jan-99 183 K817P/ K827PH/...
Description	128M x 8 Bit / 64M x 16 Bit NAND Flash Memory From old datasheet system Optocoupler with Phototransistor Output XTAL MTL T/H HC49/u
File Size	173.32K / 8 Page	View it Online	Download Datasheet

				LINEAR TECHNOLOGY CORP Linear Technology, Corp. LINER[Linear Technology]
Part No.	LT1795 LT1795CFE LT1795CSW LT1795IFE LT1795ISW
OCR Text	...t Density f = 10kHz, RF =1k, RG = 10, RS = 0 f = 10kHz, RF =1k, RG = 10, RS = 10k f = 10kHz, RF =1k, RG = 10, RS = 10k 2 u u ...55 50 TYP 10 5 2 13.5 3.5 62 60 1 1 MAX uNITS M M pF V V dB dB CIN+ CMRR Common Mo...
Description	Dual 500mA/50MHz Current Feedback Line Driver Amplifier DuAL OP-AMP, 17000 uV OFFSET-MAX, 50 MHz BAND WIDTH, PDSO20
File Size	187.73K / 12 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MGP20N60u
OCR Text	... VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vd IC = 10 Ad Vdc, Adc, VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 25 C) 25C) Energy losses include "tail" td(on) tr td(off) tf Eoff td(o...
Description	Insulated Gate Bipolar Transistor 31 A, 600 V, N-CHANNEL IGBT, TO-220AB
File Size	116.62K / 6 Page	View it Online	Download Datasheet

				MOTOROLA INC MOTOROLA[Motorola, Inc]
Part No.	MGW20N60D
OCR Text	...60 Vdc, VGE = 15 Vdc, TJ = 25C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient S...55 to 150 10 0.88 2.00 45 260 10 lbfSin (1.13 NSm) unit Vdc Vdc Vdc Adc Apk Watts W/C C ms C/W ...
Description	Insulated Gate Bipolar Transistor with Anti-Parallel Diode
File Size	245.88K / 6 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TPC8106-H
OCR Text	...ch = 25C (initial), L = 0.1 mH, RG = 25 , IAR = -10 A Note 4: Reptitve rating; pulse width limited by maximum channel temperature Note 5: on lower left of the marking indicates Pin 1. shows lot number. (year of manufacture: last decimal d...
Description	SILICON P CHANNEL MOS TYPE
File Size	510.73K / 7 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TPC8107
OCR Text	...ch = 25C (initial), L = 1.0 mH, RG = 25 W, IAR = -13 A Note 4: Repetitive rating; pulse width limited by maximum channel temperature Note 5: * on lower left of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture...
Description	Field Effect Transistor Silicon P Channel MOS Type (u-MOSIII) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (u-MOSIII)
File Size	215.18K / 7 Page	View it Online	Download Datasheet

For rg-55 u Found Datasheets File :: 11355 Search Time::1.89ms
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