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  rg-141 Datasheet PDF File

For rg-141 Found Datasheets File :: 869    Search Time::3.734ms    
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    STGF10NB60SD 9581

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STGF10NB60SD 9581
OCR Text ...= 10 A, VGE = 15V Vclamp= 480V, RG= 1k, Tj= 125C 20 Min. 5 610 65 12 33 Typ. Max. Unit S pF pF pF nC A 2/8 STGF10NB60SD SWITCHING ON ...141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 ...
Description N-CHANNEL 10A - 600V TO-220FP PowerMESH IGBT
From old datasheet system
N-CHANNEL 600V 10A TO-220FP POWERMESH IGBT

File Size 324.10K  /  8 Page

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    MOTOROLA[Motorola, Inc]
ON Semi
Part No. VN2406L_D ON3011 VN2406L
OCR Text ... = 0 4 A, Vdc, 0.4 A RL = 150 , RG = 25 ) Turn-Off Time t(on) t(r) t(off) t(f) -- -- -- -- 8.0 8.0 23 34 ns ns ns ns 2 Motorola Small-...141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC...
Description TMOS FET Transistor
From old datasheet system
N-hannel Enhancement

File Size 55.50K  /  4 Page

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    2N7000 2N7000RLRA 2N7000RLRM 2N7000RLRP 2N7000ZL1 2N7000-D 2N7000/D

http://
ONSEMI[ON Semiconductor]
Part No. 2N7000 2N7000RLRA 2N7000RLRM 2N7000RLRP 2N7000ZL1 2N7000-D 2N7000/D
OCR Text ... Time (VDD = 15 V, ID = 500 mA, RG = 25 W, RL = 30 W, Vgen = 10 V) ton toff - - 10 10 ns 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2...141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com ...
Description Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset

File Size 55.80K  /  4 Page

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    ON Semi
Part No. MGP2N60D_D ON1870
OCR Text ... Adc, VGE = 15 Vdc, L = 300 mH, RG = 10 , TJ = 125C) Energy losses include "tail" Power Supply, ZO = 50 (VCC = 300 Vdc, IC = 1 2 Ad Vdc Vd ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488 4 MGP2N60D/D Motorola IG...
Description IGBT 1.5 AMPS 600 VOLTS
From old datasheet system

File Size 74.30K  /  4 Page

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    MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422

MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422
OCR Text ... = 300 V, ID 3 0 A V RL = 100 RG = 12 , , VGS(on) = 10 V) ) td(on) tr td(off) tf Qg Qgs Qgd -- -- -- -- -- -- -- 23 34 58 35 28 5.0 17 --...141, Japan. 81-3-5487-8488 4 MTB3N60E/D Motorola TMOS Power MOSFET Transistor Device Data ...
Description From old datasheet system
TMOS POWER FET 3.0 AMPERES 600 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate

File Size 71.75K  /  4 Page

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    NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500199 NE8500199 NE85001

NEC Corp.
NEC[NEC]
Part No. NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500199 NE8500199 NE85001
OCR Text ...00100(*) NE8500100-WB NE8500100-RG NE8500199 chip 28.5 min 9.0 typ PACKAGE CODE-99 (unit: mm) package 28.5 min 9.0 typ 2.0 to 1...141.4 137.7 135.9 133.9 130.1 125.8 121.3 116.6 114.1 111.6 106.1 100.2 93.9 87.1 83.4 79.9 71.8 63....
Description 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

File Size 39.83K  /  6 Page

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    Infineon
Part No. SDA6000
OCR Text ...nki) (+358) 9-5105 1 Berkshire RG 12 8FZ (+44) 1344-39 60 00 Amaroussio/Athen (+30) 1-686 41 11 Hong Kong (+852) 2832 05 00 Milano (+39) 02-6676-1 New Delhi 110 014 (+91) 11-461 74 47 Bangalore 560 001 (+91) 80-227 98 74 Mumbai (+91...
Description 16Bit C166 MCU with DSP
From old datasheet system

File Size 100.55K  /  2 Page

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    STP9NK60ZFDFP STP9NK60ZFD STB9NK60ZFDT4 STB9NK60ZFD 9573

STMicroelectronics
Part No. STP9NK60ZFDFP STP9NK60ZFD STB9NK60ZFDT4 STB9NK60ZFD 9573
OCR Text ...ditions VDD = 300 V, ID = 3.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 7 A, VGS = 10V Min. Typ. 19 17 38 7 21 5...141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 ...
Description N-CHANNEL 600V 0.85 OHM 7A TO-220/TO-220FP/D2PAK FAST DIODE SUPERMESH POWER MOSFET
From old datasheet system

File Size 361.91K  /  9 Page

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    J112_D ON0286 J112

MOTOROLA INC
Motorola, Inc.
Motorola Inc
ON Semiconductor
Part No. J112_D ON0286 J112
OCR Text ...st discharge to VDS(on) through RG and RK in series with the parallel combination of effective load impedance (R D ) and Drain-Source Resist...141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC...
Description JFET CHOPPER TRANSISTOR (N-CHANNEL- DEPLETION)
From old datasheet system
CASE 29-4, STYLE 5 TO-2 (TO-26AA)

File Size 109.37K  /  4 Page

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    ONSEMI[ON Semiconductor]
Part No. MGP11N60E_D ON1851 MGP11N60E ON1848
OCR Text ...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488 Motorola IGBT Device Data ...
Description From old datasheet system
IGBT IN TO-220 11 A @ 90C15 A @ 25C 600 VOLTS
SHORT CIRCUIT RATED LOW ON-VOLTAGE 15 A, 600 V, N-CHANNEL IGBT, TO-220AB

File Size 116.41K  /  5 Page

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For rg-141 Found Datasheets File :: 869    Search Time::3.734ms    
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