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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...C 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy Peak non-repetitive avalanche current CONDITIONS Unclamped inductive load, IAS = 7.8 A; tp = 300 s; Tj prior to avalanche = 25C; VDD 25 V; RGS = 50 ; VGS = 10 V; refer to fig:14 M...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

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    Microsemi
Part No. APT20M11JFLL
OCR Text ... sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss ...
Description FREDFETs

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    Fagor
Part No. FT1616BH
OCR Text ... g mt2 rms on-state current non-repetitive on-state current non-repetitive on-state current fusing current peak gate current average gate power dissipation critical rate of rise of on-state current operating temperature storage temperature ...
Description 200 V, 50 mA high commutation TRIAC

File Size 138.05K  /  4 Page

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    Philips
Part No. BY8108
OCR Text ...onditions min. max. unit v rrm repetitive peak reverse voltage by8104 - 5kv by8106 - 8kv by8108 - 10 kv by8110 - 12 kv by8112 - 14 kv by8114 - 17 kv by8116 - 19 kv v rw working reverse voltage by8104 - 4kv by8106 - 6kv by8108 - 8kv by8110 ...
Description Very fast high-voltage soft-recovery controlled avalanche rectifiers

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    Philips
Part No. BY8100
OCR Text ...onditions min. max. unit v rrm repetitive peak reverse voltage by8104 - 5kv by8106 - 8kv by8108 - 10 kv by8110 - 12 kv by8112 - 14 kv by8114 - 17 kv by8116 - 19 kv v rw working reverse voltage by8104 - 4kv by8106 - 6kv by8108 - 8kv by8110 ...
Description Very fast high-voltage soft-recovery controlled avalanche rectifiers

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    Microsemi
Part No. APT6011B2VRG APT6011LVRG
OCR Text ... sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss ...
Description MOSFET

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    Microsemi
Part No. APT50M60L2VRG
OCR Text ... sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss ...
Description MOSFET

File Size 148.68K  /  5 Page

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    Microsemi
Part No. APT10030L2VRG
OCR Text ... sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss ...
Description MOSFET

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    ST Microelectronics
Part No. Z0103MN-6AA4
OCR Text repetitive peak off-state voltage, v drm /v rrm 600 or 800 v triggering gate current, i gt (q1) 3 to 25 ma description the z01 series is suitable for general purpose ac switching applications. these devices are typically used in appli...
Description 1A Triacs

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    ST Microelectronics
Part No. STTH810GY-TR
OCR Text ...mbol parameter value unit v rrm repetitive peak reverse voltage 1000 v i f(rms) forward rms current 30 a i f(av) average forward current, ? = 0.5 t c = 130 c 8 a i frm repetitive peak forward current t p = 5 s, f = 5 khz square 100 a i ...
Description Automotive ultrafast recovery - high voltage diode

File Size 90.80K  /  8 Page

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