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pulsed Datasheet PDF File

For pulsed Found Datasheets File :: 61009 Search Time::1ms
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				STMicroelectronics
Part No.	STD7LN80K5
OCR Text	... a i d (2) drain current (pulsed) 20 a p tot total dissipation at t c = 25 c 85 w dv/dt (3) peak diode recovery voltage slo pe 4.5 v/ns dv/dt (4) mosfet dv/dt ruggedness 50 v/ns t stg storage temperat...
Description	100% avalanche tested
File Size	656.55K / 16 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STP10LN80K5
OCR Text	... a i dm (1) drain current (pulsed) 32 a p tot total dissipation at t c = 25 c 110 w dv/dt (2) peak diode recovery voltage slope 4.5 v/ns dv/dt (3) mosfet dv/dt ruggedness 50 t j operating junction temp...
Description	N-channel 800 V, 0.55 typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package
File Size	596.66K / 14 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STF7LN80K5
OCR Text	... a i d (2) drain current (pulsed) 20 a p tot total dissipation at t c = 25 c 25 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s; t c =25 c) 2500 v dv/dt (3) peak...
Description	Ultra-low gate charge
File Size	569.24K / 13 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STF10LN80K5
OCR Text	...5 a i d (2) drain current pulsed 32 a p tot total dissipation at t c = 25 c 25 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1s; t c =25c) 2500 v dv/dt (3) pea...
Description	Ultra-low gate charge
File Size	570.60K / 14 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF530A
OCR Text	...urrent (TC=100 C) Drain Current-pulsed Gate-to-Source Voltage Single pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C ) 56 + 20 _ 261 14 5.5 6.5 55 0.36 - ...
Description	N-CHANNEL POWER MOSFET Advanced Power MOSFET
File Size	253.11K / 7 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics
Part No.	IRF530FI IRF530 3003
OCR Text	... at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC) Storage T emperature Max. O perating Junct ion T emperature o o Value IRF530FI 100 100 20 16 11 64 90 0.6 -65 to...
Description	From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
File Size	46.69K / 6 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	IRF530FP 5758
OCR Text	...at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature Value 100 100 20 10 7 64 35 0.23 2000 -65 to 175 175 Unit V...
Description	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
File Size	76.48K / 5 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	...oltage Continuous drain current pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 C to 175C Tj = 25 C to 175C; RGS = 20 k Tmb = 25 C; VGS = 10 V Tmb = 100 C; VGS = 10 V Tmb = 25 C Tmb...
Description	N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STD13N65M2
OCR Text	...operating area. drain current (pulsed) 40 a p tot total dissipation at t c = 25 c 110 w dv/dt (2) 2. i sd 10 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd =400 v. peak diode recovery voltage slope 15 v/ns dv/dt (3) 3. v ds ...
Description	100% avalanche tested
File Size	531.96K / 16 Page	View it Online	Download Datasheet

For pulsed Found Datasheets File :: 61009 Search Time::1ms
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