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pi-mos Datasheet PDF File

For pi-mos Found Datasheets File :: 605 Search Time::1.156ms
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				Toshiba Semiconductor
Part No.	2SK285507 2SK2855
OCR Text	... CONDITION VDS = 6V, f = 849MHz Pi = 23dBmW VDS = 6V, f = 849MHz Pi = 23dBmW, PO = 31dBmW VGS = 0, ID = 1A VDS = 6V, VGS = 0 VDS = 6V, ID = 500A VGS = 6V, VDS = 0 MIN. 31 55 10 -- 1.0 -- TYP. -- -- -- -- 1.4 -- MAX. -- -- -- 100 1.8 100 UNI...
Description	FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION
File Size	148.04K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SK307407 2SK3074
OCR Text	...50mA (VGS = adjust) f = 520MHz, Pi = 20mW VDS = 9.6V, ID = 0.5mA VDS = 20V, VGS = 0 VGS = 10V, VDS = 0 Note 2: These characteristic values are measured using measurement tools specified by Toshiba. RF OUTPUT POWER TEST FIXTURE 2 ...
Description	SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER
File Size	154.80K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SK307507 2SK3075
OCR Text	...50mA (VGS = adjust) f = 520MHz, Pi = 500mW MIN 7.5 50 11.7 1.0 -- -- TYP. -- -- -- 1.5 -- -- MAX -- -- -- 2.0 10 5 UNIT W % dB V A A HANDLING PRECAUTION * When handling individual devices, be sure that working desks, human bodies and so...
Description	SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER
File Size	162.30K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SK3078A07 2SK3078A
OCR Text	... mA (VGS = adjust) f = 470 MHz, Pi = 20dBmW ZG = ZL == 50 VDS = 4.8 V, ID = 0.5 mA VDS = 10 V, VGS = 0 V VGS = 5 V, VDS = 0 V VDS = 6.5 V, f = 470 MHz, Pi = 20dBmW, Po = 28.0dBmW (VGS = adjust) VSWR LOAD 10:1 all phase Min 28.0 50 8.0 0.20...
Description	Silicon N Channel MOS Type VHF/UHF Band Amplifier Applications
File Size	126.56K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SK3079A07 2SK3079A
OCR Text	... mA (VGS = adjust) f = 470 MHz, Pi = 20dBmW ZG = ZL = 50 VDS = 4.5 V, ID = 0.5 mA VDS = 10 V, VGS = 0 V VGS = 5 V, VDS = 0 V VDS = 5 V, f = 470 MHz, Pi = 20dBmW, Po = 33.5dBmW (VGS = adjust) VSWR LOAD 10:1 all phase Min 33.5 50.0 13.5 T...
Description	Silicon N Channel MOS Type 470 MHz Band Amplifier Applications
File Size	143.14K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM6J26FE
OCR Text	...nt Circuit (top view) 6 5 4 PI 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators ...
Description	High Speed Switching Applications
File Size	153.78K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM6P26TU
OCR Text	...nt Circuit (top view) 6 5 4 PI 1 2 3 Q1 Q2 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. O...
Description	High Speed Switching Applications
File Size	146.66K / 6 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	THS9001DBVR THS9001DBVT THS900108
OCR Text	...S = 49 mA f = 100 MHz 0 2 4 6 8 PI - Input Power - dBm 10 12 14 Figure 7. Figure 8. 6 Submit Documentation Feedback THS9001 www.ti.com SLOS426B - NOVEMBER 2003 - REVISED JANUARY 2007 ADJACENT CHANNEL (ACPR) and ALTERNATE...
Description	50 MHz to 350 MHz CASCADEABLE AMPLIFIER
File Size	596.74K / 20 Page	View it Online	Download Datasheet

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