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3100S DRH26 2XFS1M PMD5002K 2N3799X NCE70H13 AQY414S B8279
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    SSM3J109TU

Toshiba Semiconductor
Part No. SSM3J109TU
OCR Text ...ted failure rate, etc). Note 1: mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 t, Cu Pad: 645 mm2) Note 2: mounted on an FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm ) UFM JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg...
Description Field-Effect Transistor Silicon P-Channel MOS Type Power Management Switch Applications High-Speed Switching Applications

File Size 195.32K  /  5 Page

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    SSM3J110TU

Toshiba Semiconductor
Part No. SSM3J110TU
OCR Text ...ted failure rate, etc). Note 1: mounted on ceramic board. (25.4 mm x 25.4 mm x 0.8 mm, Cu Pad: 645 mm2 ) Note 2: mounted on FR4 board. (25.4 mm x 25.4 mm x 1.6mm, Cu Pad: 645 mm2 ) Note: 1: Gate 2: Source 3: Drain UFM JEDEC JEITA TOSH...
Description Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications

File Size 137.49K  /  5 Page

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    SSM3J111TU

Toshiba Semiconductor
Part No. SSM3J111TU
OCR Text ...ted failure rate, etc). Note 1: mounted on ceramic board. (25.4 mm x 25.4 mm x 0.8 mm, Cu Pad: 645 mm2 ) Note 2: mounted on FR4 board. (25.4 mm x 25.4 mm x 1.6 mm, Cu Pad: 645 mm2 ) Note: UFM JEDEC JEITA TOSHIBA 2-2U1A Weight: 6....
Description Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications

File Size 470.43K  /  5 Page

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    SSM3J112TU

Toshiba Semiconductor
Part No. SSM3J112TU
OCR Text ...ted failure rate, etc). Note 1: mounted on ceramic board. (25.4 mm x 25.4 mm x 0.8 mm, Cu Pad: 645 mm2 ) Note 2: mounted on FR4 board. (25.4 mm x 25.4 mm x 1.6 mm, Cu Pad: 645 mm2 ) Note: 1: Gate 2: Source 3: Drain UFM JEDEC JEITA TOS...
Description Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications

File Size 126.16K  /  6 Page

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    PSS8050 PSS8050D

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PSS8050 PSS8050D
OCR Text ... 3 Tstg Tj Tamb Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 3. Devic...
Description PSS8050; NPN medium power 25 V transistor

File Size 97.19K  /  10 Page

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    SSM3J113TU

Toshiba Semiconductor
Part No. SSM3J113TU
OCR Text ...ted failure rate, etc). Note 1: mounted on ceramic board. (25.4 mm x 25.4 mm x 0.8 mm, Cu Pad: 645 mm2 ) Note 2: mounted on FR4 board. (25.4 mm x 25.4 mm x 1.6 mm, Cu Pad: 645 mm2 ) Note: UFM JEDEC JEITA TOSHIBA 2-2U1A Weight: 6....
Description Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications

File Size 122.51K  /  6 Page

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    SS0503EJ

Sanyo Semicon Device
Part No. SS0503EJ
OCR Text ...ed Test Circuit. VR=10V, f=1MHz mounted on a ceramic board (250mm2!0.8mm) 16.5 200 Conditions Ratings min 30 0.4 0.45 360 10 typ max Unit V V V A ns pF C / W Marking : DE Any and all SANYO products described or contained herein do not...
Description Schottky Barrier Diode 30V, 500mA Rectifier

File Size 31.38K  /  3 Page

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    SS0503EC

Sanyo Semicon Device
Part No. SS0503EC
OCR Text ...mA, See specified Test Circuit. mounted in Cu-foiled area of 0.72mm20.03mm on glass epoxy board 70 Conditions Ratings min 30 0.31 0.51 6 10 0.36 0.56 100 typ max Unit V V V A pF ns C / W Marking : DB Any and all SANYO Semiconductor pr...
Description Low VF Schottky Barrier Diode 30V, 0.5A Rectifier

File Size 43.27K  /  3 Page

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    SSM3J115TU

Toshiba Semiconductor
Part No. SSM3J115TU
OCR Text ...ted failure rate, etc). Note 1: mounted on a ceramic board. 2 (25.4 mm x 25.4 mm x 0.8 mm, Cu Pad: 645 mm ) Note 2: mounted on an FR4 board. 2 (25.4 mm x 25.4 mm x 1.6 mm, Cu Pad: 645 mm ) Note: 1: Gate 2: Source UFM 3: Drain JEDEC JE...
Description Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications Power Management Switch Applications

File Size 133.93K  /  6 Page

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