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For methodology Found Datasheets File :: 1448    Search Time::1.25ms    
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    MD7IC2250GNR1 MD7IC2250NBR1 MD7IC2250NR1

Freescale Semiconductor, Inc
Part No. MD7IC2250GNR1 MD7IC2250NBR1 MD7IC2250NR1
OCR Text ...protection characteristics test methodology class human body model (per jesd22--a114) 1a (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) ii (minimum) table 4. moisture sensitivity level test...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 704.90K  /  22 Page

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    MW7IC2725GNR1 MW7IC2725NBR1 MW7IC2725NR1

Freescale Semiconductor, Inc
Part No. MW7IC2725GNR1 MW7IC2725NBR1 MW7IC2725NR1
OCR Text ...rotection Characteristics Test methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) II (Minimum) Table 4. Moisture Sensitivity Leve...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 809.04K  /  24 Page

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    ATC100B0R6BT250XT ATC100B5R6BT250XT ATC100B6R8BT250XT ATC100B8R2BT250XT ATC700B0R3BT500XT ATC700B0R4BT500XT MW7IC2240NR1

Freescale Semiconductor, Inc
Part No. ATC100B0R6BT250XT ATC100B5R6BT250XT ATC100B6R8BT250XT ATC100B8R2BT250XT ATC700B0R3BT500XT ATC700B0R4BT500XT MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
OCR Text ...rotection Characteristics Test methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) II (Minimum) 1. Continuous use at maximum tempe...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 807.38K  /  24 Page

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    MD7IC2050NR110 MD7IC2050NBR1

Freescale Semiconductor, Inc
Freescale Semiconductor...
Part No. MD7IC2050NR110 MD7IC2050NBR1
OCR Text ...to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. md7ic2050nr1 md7ic2050gnr1 md7ic2050nbr1 3 rf device data freescale semiconductor...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 422.80K  /  24 Page

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    MW7IC2750GNR1 MW7IC2750NBR1 MW7IC2750NR1

Freescale Semiconductor, Inc
Part No. MW7IC2750GNR1 MW7IC2750NBR1 MW7IC2750NR1
OCR Text ...rotection Characteristics Test methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Lev...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 875.75K  /  25 Page

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    MRF8S9200NR310

Freescale Semiconductor, Inc
Part No. MRF8S9200NR310
OCR Text ... to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mrf8s9200n rev. 1, 5/2010 freescale semiconductor technical data mrf8...
Description RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

File Size 484.00K  /  13 Page

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    MW7IC2750NR110 MW7IC2750GNR1 MW7IC2750NBR1

Freescale Semiconductor, Inc
http://
Part No. MW7IC2750NR110 MW7IC2750GNR1 MW7IC2750NBR1
OCR Text ...rotection Characteristics Test methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Class 1C (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Te...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 893.11K  /  25 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
OCR Text ...rotection Characteristics Test methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) B (Minimum) III (Minimum) Table 4. Moisture Sensitivity Leve...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 871.22K  /  23 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
OCR Text ...rotection Characteristics Test methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class O (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Leve...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 918.87K  /  32 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MW6S004NT1
OCR Text ...rotection Characteristics Test methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) III (Minimum) 1. MTTF calculator available at h...
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 521.44K  /  12 Page

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For methodology Found Datasheets File :: 1448    Search Time::1.25ms    
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