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For ldmost Found Datasheets File :: 315 Search Time::4.109ms
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				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BLF1046 BLF1046P
OCR Text	...sistor PACKAGE OUTLINE Flanged ldmost ceramic package; 2 mounting holes; 2 leads BLF1046 SOT467C D A F 3 D1 U1 q C B c 1 E1 H U2 E A p w1 M A M B M 2 b w2 M C M Q 0 5 scale 10 mm DIMENSI...
Description	UHF power LDMOS transistor
File Size	43.02K / 8 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	PD57018S-E PD57018STR-E PD57018-E PD57018TR-E
OCR Text	ldmost plastic family N-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 18W with 16.5dB gain @ 945MHz /28V New RF plastic package PowerSO-10RF (formed lead) Descr...
Description	RF power transistor, ldmost plastic family N-channel enhancement-mode lateral MOSFETs
File Size	516.65K / 28 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLS6G2933S-130
OCR Text	...ations Table 10. Acronym LDMOS ldmost RF S-band SMD VSWR Abbreviations Description Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Short wave Band Surface Mounted Device ...
Description	LDMOS S-band radar power transistor
File Size	70.70K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BGF944
OCR Text	...OUNTING RECOMMENDATIONS General ldmost base station modules are manufactured with the dies directly mounted onto a copper flange. The matching and bias circuit components are mounted on a printed-circuit board (PCB), which is also soldered ...
Description	GSM900 EDGE power module
File Size	87.09K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BGF844
OCR Text	...OUNTING RECOMMENDATIONS General ldmost base station modules are manufactured with the dies directly mounted onto a copper flange. The matching and bias circuit components are mounted on a printed-circuit board (PCB), which is also soldered ...
Description	GSM800 EDGE power module
File Size	86.55K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLF4G10LS-160
OCR Text	...F4G10LS-160 Description flanged ldmost ceramic package; 2 mounting holes; 2 leads Version SOT502A Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ...
Description	UHF power LDMOS transistor
File Size	118.04K / 15 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BGF1801-10
OCR Text	...OUNTING RECOMMENDATIONS General ldmost base station modules are manufactured with the dies directly mounted onto a copper flange. The matching and bias circuit components are mounted on a printed-circuit board (PCB), which is also soldered ...
Description	GSM1800 EDGE power module 1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
File Size	89.63K / 11 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	PD54003STR-E PD54003-E10 PD54003S-E PD54003TR-E STMICROELECTRONICS-PD54003TR-E PD54003-E
OCR Text	ldmost plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 3 W with 12dB gain @ 500 MHz New RF plastic package PowerSO-10RF (formed lead) Descriptio...
Description	RF POWER transistor, ldmost plastic family N-channel enhancement-mode, lateral MOSFETs
File Size	1,497.45K / 27 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	PD55008STR-E PD55008-E10 PD55008TR-E PD55008S-E
OCR Text	ldmost plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 8 W with 17dB gain @ 500 MHz/12.5 V New RF plastic package PowerSO-10RF (formed lead) Des...
Description	RF POWER transistor, ldmost plastic family N-channel enhancement-mode, lateral MOSFETs
File Size	464.80K / 25 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	PD55025-E10
OCR Text	ldmost plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V New RF plastic package PowerSO-10RF (formed lead) ...
Description	RF POWER transistor, ldmost plastic family N-channel enhancement-mode, lateral MOSFETs
File Size	506.41K / 23 Page	View it Online	Download Datasheet

For ldmost Found Datasheets File :: 315 Search Time::4.109ms
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