| |
|
 |
MICROSEMI[Microsemi Corporation]
|
| Part No. |
APT100M50J
|
| OCR Text |
...490 1.0 855 35 8 V ns C V/ns
ISD = 75A, TJ = 25C, VGS = 0V ISD = 75A 3 diSD/dt = 100A/s, TJ = 25C ISD 75A, di/dt 1000A/s, VDD = 100V, TJ...202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Re... |
| Description |
N-Channel MOSFET
|
| File Size |
263.33K /
4 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
MICROSEMI[Microsemi Corporation]
|
| Part No. |
APT13F120S APT13F120B
|
| OCR Text |
....03 10 13.5 25 V ns C A V/ns
ISD = 7A, TJ = 25C, VGS = 0V
ISD = 7A 3 diSD/dt = 100A/s VDD = 100V
TJ = 25C TJ = 125C TJ = 25C TJ = 1...202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Re... |
| Description |
N-Channel FREDFET
|
| File Size |
249.19K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
MICROSEMI[Microsemi Corporation]
|
| Part No. |
APT14M100S APT14M100B
|
| OCR Text |
...
56 1 1065 22 10 V ns C V/ns
ISD = 7A, TJ = 25C, VGS = 0V ISD = 7A, VDD = 100V 3 diSD/dt = 100A/s, TJ = 25C ISD 7A, di/dt 1000A/s, VDD =...202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Re... |
| Description |
N-Channel MOSFET
|
| File Size |
249.97K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
MICROSEMI[Microsemi Corporation]
|
| Part No. |
APT14M120S APT14M120B
|
| OCR Text |
...1 1.0 1205 23 10 V ns C V/ns
ISD = 7A, TJ = 25C, VGS = 0V ISD = 7A 3 diSD/dt = 100A/s, TJ = 25C ISD 7A, di/dt 1000A/s, VDD = 800V, TJ = ...202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Re... |
| Description |
N-Channel MOSFET
|
| File Size |
388.37K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
MICROSEMI[Microsemi Corporation]
|
| Part No. |
APT18M100S APT18M100B
|
| OCR Text |
...8 1.0 1080 24 10 V ns C V/ns
ISD = 9A, TJ = 25C, VGS = 0V ISD = 9A 3 diSD/dt = 100A/s, TJ = 25C ISD 9A, di/dt 1000A/s, VDD = 800V, TJ = ...202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Re... |
| Description |
N-Channel MOSFET
|
| File Size |
388.90K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
MICROSEMI[Microsemi Corporation]
|
| Part No. |
APT18M80S APT18M80B
|
| OCR Text |
...70 1.0 860 16 10 V ns C V/ns
ISD = 9A, TJ = 25C, VGS = 0V ISD = 9A, VDD = 100V 3 diSD/dt = 100A/s, TJ = 25C ISD 9A, di/dt 1000A/s, VDD =...202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Re... |
| Description |
N-Channel MOSFET
|
| File Size |
249.33K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
MICROSEMI[Microsemi Corporation]
|
| Part No. |
APT19F100J_07
|
| OCR Text |
...5 10.6 14.2 25 V ns C A V/ns
ISD = 16A, TJ = 25C, VGS = 0V
ISD = 16A 3 VDD = 100V diSD/dt = 100A/s
TJ = 25C TJ = 125C TJ = 25C TJ =...202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Re... |
| Description |
N-Channel FREDFET
|
| File Size |
260.51K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
MICROSEMI[Microsemi Corporation]
|
| Part No. |
APT19F100J
|
| OCR Text |
...1.1 270 640 V ns C A 25 V/ns
ISD = 16A, TJ = 25C, VGS = 0V
ISD = 16A 3 diSD/dt = 100A/s
TJ = 25C TJ = 125C TJ = 25C TJ = 125C
IS...202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Re... |
| Description |
1000V, 19A, 0.46ヘ Max, trr ÷270ns
|
| File Size |
397.59K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
MICROSEMI[Microsemi Corporation]
|
| Part No. |
APT19M120J
|
| OCR Text |
...104 1 1290 33 10 V ns C V/ns
ISD = 14A, TJ = 25C, VGS = 0V ISD = 14A 3 diSD/dt = 100A/s, TJ = 25C ISD 14A, di/dt 1000A/s, VDD = 100V, TJ...202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Re... |
| Description |
N-Channel MOSFET
|
| File Size |
265.27K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
MICROSEMI[Microsemi Corporation]
|
| Part No. |
APT21M100J
|
| OCR Text |
...200 1 1140 30 10 V ns C V/ns
ISD = 16A, TJ = 25C, VGS = 0V ISD = 16A 3 diSD/dt = 100A/s, TJ = 25C ISD 16A, di/dt 1000A/s, VDD = 667V, TJ...202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Re... |
| Description |
N-Channel MOSFET
|
| File Size |
240.73K /
4 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
