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NXP Semiconductors N.V.
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| Part No. |
BLF4G20-110B BLF4G20S-110B BLF4G20S-110B112
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| OCR Text |
... [2] EVMrms (%) (typ) 2.1
CW gsm edge
[1] [2]
ACPR400 at 30 kHz resolution bandwidth. ACPR600 at 30 kHz resolution bandwidth.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during... |
| Description |
UHF power LDMOS transistor
From old datasheet system
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| File Size |
108.78K /
14 Page |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF18090BSR3
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| OCR Text |
...e lateral mosfets designed for gsm and edge base station applications with frequencies from 1.9 to 2.0 ghz. suitable for fm, tdma , cdma and multicarrier amplifier applications. to be used in class ab for gsm and edge cellular radio appli... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外
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| File Size |
385.00K /
8 Page |
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Motorola
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| Part No. |
MRF18085ALSR3 MRF18085AR3 MRF18085A
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| OCR Text |
gsm and gsm edge base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for gsm-gsm ... |
| Description |
gsm/gsm edge, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
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| File Size |
411.94K /
8 Page |
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it Online |
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Freescale Semiconductor
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| Part No. |
MWE6IC9080GNR1 MWE6IC9080NBR1
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| OCR Text |
... station modulations. ? typical gsm performance: v dd =28volts,i dq1 = 230 ma, i dq2 = 630 ma, p out = 80 watts cw frequency g ps (db) pae (...edge performance: v dd =28volts,i dq1 = 230 ma, i dq2 = 630 ma, p out = 35 watts avg. frequency g ps... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
762.86K /
19 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6S9125NR1
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| OCR Text |
... - 47.1 dbc @ 30 khz bandwidth gsm edge application ? typical gsm edge performance: v dd = 28 volts, i dq = 700 ma, p out = 60 watts avg., full frequency band (865 - 895 mhz or 921 - 960 mhz) power gain ? 20 db drain efficiency ? 40% ... |
| Description |
RF Power Field Effect Transistors 射频功率场效应晶体管
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| File Size |
471.78K /
16 Page |
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it Online |
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Price and Availability
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