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  charge-air Datasheet PDF File

For charge-air Found Datasheets File :: 12725    Search Time::1.297ms    
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    AUIRF7665S2TR AUIRF7665S2TR1

International Rectifier
Part No. AUIRF7665S2TR AUIRF7665S2TR1
OCR Text ...FET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio amplifier perf...air). Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint ful...
Description DirectFETPower MOSFET

File Size 339.52K  /  11 Page

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    AOD60708

Alpha & Omega Semiconductors
Alpha & Omega Semiconductor...
Part No. AOD60708
OCR Text ...xcellent r ds(on) and low gate charge. the complementary mosfets may be used in h-bridge, inverters and other applications. -ro...air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja and the maximum ...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 207.33K  /  9 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOD607
OCR Text ...xcellent r ds(on) and low gate charge. the complementary mosfets may be used in h-bridge, inverters and other applications. g1 s1 g2 ...air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja and the maximum ...
Description Complementary Enhancement

File Size 644.18K  /  9 Page

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    AOD60909

Alpha & Omega Semiconductors
Alpha & Omega Semiconductor...
Part No. AOD60909
OCR Text ...cellent r ds(on) and low gate charge. the complementary mosfets may be use d in h-bridge, inverters and other applications. -rohs ...air environment with t a =25c. the power dissipation p dsm and current rating i dsm are based o...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 267.63K  /  9 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOD609
OCR Text ...cellent r ds(on) and low gate charge. the complementary mosfets may be use d in h-bridge, inverters and other applications. g1 s1 g2 s2 ...air environment with t a =25c. the power dissipation p dsm and current rating i dsm are based o...
Description Complementary Enhancement

File Size 733.43K  /  9 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOI472A
OCR Text ...ow rds(on) at 4.5vgs ? low gate charge ? high current capability ? rohs and halogen-free compliant drain-source voltage 30 v gate-source vol...air environmen t with t a =25 c. the a. the value of r q ja is measured with the device mounted ...
Description 30V N-Channel AlphaMOS

File Size 386.38K  /  6 Page

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    AON2800

Alpha & Omega Semiconductors
Part No. AON2800
OCR Text ...0v, v ds =0v, f=1mhz total gate charge v gs =4.5v, v ds =10v, i d =4a gate source charge gate drain charge maximum body-diode continuous cur...air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum ...
Description 20V Dual N-Channel MOSFET

File Size 259.71K  /  5 Page

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